Fairchild Semiconductor FJT44 Datasheet
FJT44
High Voltage Transistor
NPN Epitaxial Silicon Transistor
1
SOT-223
1.Base 2.Collector 3.Emitter
FJT44
Absolute Maximum Ratings
Symbol Parameter Value Units
Collector-Base Voltage 500 V
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 6 V
Collector Current 300 mA
Collector Dissipation (TC=25°C) 2 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC=1mA, IB=0.1mA
V
CE
(sat) * Base-Emitter Saturation Voltage IC=10mA, IB=1mA 0.75 V
V
BE
C
ob
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=100µA, IB=0 500 V
* Collector -Emitter Breakdown Voltage IC=1mA, IB=0 400 V
Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
Collector Cut-off Current VCB=400V, IE=0 0.1 µA
Collector Cut-off Current VCE=400V, IB=0 0.5 µA
Emitter Cut-off Current VEB=4V, IC=0 0.1 µA
* DC Current Gain VCE=10V, IC=1mA
Output Capaci tance VCB=20V, IE=0, f=1MHz 7 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=10V, IC=10mA
V
CE
=10V, IC=50mA
V
CE
V
=10V, IC=100mA
CE
I
=10mA, IB=1mA
C
=50mA, IB=5mA
I
C
40
50
45
40
200
0.4
0.5
0.75
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. A3, August 2002
Typical Characteristics
FJT44
160
140
120
100
80
60
40
20
, DC CURRENT GAIN
FE
h
0
-20
-40
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Turn-On Switching Times
100
10
t[us], TIME
1
VCE=10V
VCC=150V
IC/IB=10
℃
Ta=25
ts
tf
10
1
VCC=150V
IC/IB=10
Ta=25oC
VBE(off)=4V
t[us], TIME
tf
td
0.1
1 10 100
IC[mA], COLLECTOR CURRENT
1000
100
C
ib
[pF], CAPACITANCE
ob
[pF],C
ib
C
C
ob
10
Ta=25oC
f=1MHz
0.1
110100
IC[mA], COLLECTOR CURRENT
1
0.1 1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Turn-Off Switching Times Figure 4. Capacitance
1.0
Ta=25oC
0.8
0.6
0.4
[V], VOLTAGE
0.2
VCE(sat)@IC/IB=10
0.0
0.1 1 10 100 1000
VBE(sat) @IC/IB=10
VBE(on) @VCE=10V
IC[mA], COLLECTOR CURRENT
0.5
IC=1mA
0.4
0.3
0.2
0.1
[V] COLLECTOR EMITTE R VO LTA G E
CE
V
0.0
10 100 1000 10000 100000
IC[mA], COLLECTOR CURRENT
IC=10mA
IC=50mA
Ta=25oc
Figure 5. On Voltage Figure 6. Collector Saturation Region
©2002 Fairchild Semiconductor Corporation Rev. A3, August 2002
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