Fairchild Semiconductor FJNS4214R Datasheet
FJNS4214R
FJNS4214R
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
=4.7KΩ, R2=47KΩ)
1
• Complement to FJNS3214R
1
TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -50 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -10 V
Collector Current -100 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -0.3 V
V
CE
f
T
C
ob
(off) Input Off Voltage VCE= -5V, IC= -100µA-0.5 V
V
I
(on) Input On Voltage VCE= -0.2V, IC= -5mA -1.3 V
V
I
R
1
R
1/R2
Collector-Base Breakdown Voltage IC= -10µA, IE=0 -50 V
Collector-Emitter Breakdown Voltage IC= -100µA, IB=0 -50 V
Collector Cutoff Current VCB= -40V , IE=0 -0.1 µA
DC Current Gain VCE= -5V, IC= -5mA 68
Current Gain Bandwidth Product VCE= -10V , IC=-5mA 200 M Hz
Output Capacitance VCB= -10V , IE=0
Input Resistor 3.2 4.7 6.2 KΩ
Resistor Ratio 0.09 0.1 0.11
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
f=1.0MHz
Equivalent Circuit
R1
B
R2
5.5 pF
C
E
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Package Dimensions
4.00
(1.10)
0.66 MAX.
±0.20
TO-92S
±0.20
3.70
±0.30
2.31
FJNS4214R
±0.20
14.47
0.49
±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
3.72
2.86
±0.20
1.27TYP
±0.20
±0.10
0.77
0.35
+0.10
–0.05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
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