Fairchild Semiconductor FJNS4210R Datasheet
FJNS4210R
FJNS4210R
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=10KΩ)
• Complement to FJNS3210R
1
TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -40 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current -100 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.3 V
V
CE
C
ob
f
T
R Input Resistor 7 10 13 KΩ
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -40 V
Collector-Emitter Breakdown Voltage IE= -1mA, IB=0 -40 V
Collector Cut-off Current VCB= -30V , IE=0 -0.1 µA
DC Current Gain VCE= -5V, IC= -1mA 100 600
Output Capacitance VCB= -10V , IE=0
Current Gain Bandwidth Product VCE= -10V , IC= -5mA 200 MHz
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
f=1MHz
Equivalent Circuit
R
B
5.5 pF
C
E
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Typical Characteristics
FJNS4210R
10k
1k
, DC CURRENT GAIN
100
FE
h
10
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation
350
300
250
200
150
VCE = - 5V
R = 10K
-1000
-100
-10
(sat)[mV], SATURATION VOLTAGE
CE
V
-1
-1 -10 -100 -1000
IC = 10I
B
R = 10k
IC[mA], COLLECTOR CURRENT
100
[mW], POWER DISSIPATION
C
P
50
0
0 25 50 75 100 125 150 175
Ta[oC], AMBIENT TEMPERATURE
Figure 3. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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