Fairchild Semiconductor FJNS3209R Datasheet
FJNS3209R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=4.7KΩ)
• Complement to FJNS4209R
FJNS3209R
1
TO-92S
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 5 V
Collector Current 100 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.3 V
V
CE
C
ob
f
T
R Input Resistor 3.2 4.7 6. 2 KΩ
Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
Collector-Emitter Breakdown Voltage IE=1mA, IB=0 40 V
Collector Cut-off Current VCB=30V, IE=0 0.1 µA
DC Current Gain VCE=5V, IC=1mA 100 600
Output Capacitance VCB=10V, IE=0
Current Gain Bandwidth Product VCE=10V, IC=5mA 250 MHz
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
f=1MHz
Equivalent Circuit
R
B
C
E
3.70 pF
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Typical Characteristics
FJNS3209R
10000
1000
100
, DC CURRENT GAIN
FE
h
10
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
400
350
300
250
200
150
100
[mW], POWER DISSIPATION
C
P
50
0
0 25 50 75 100 125 150 175
Ta[oC], AMBIENT TEMPERATURE
VCE = 5V
R = 4.7K
1000
100
10
(sat)[mV], SATURATION VOLTAGE
CE
V
1
110100
IC = 10I
B
R = 4.7K
IC[mA], COLLECTOR CURRENT
Figure 3. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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