Fairchild Semiconductor FJN965 Datasheet
FJN965
For Output Amplifier of Electronic Flash Unit
• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage
FJN965
1
1. Emitter 2. Collector 3. Base
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 7 V
Collector Current 5 A
Collector Dissipation 0.75 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=3A, IB=0.1A 1 V
V
CE
f
T
C
ob
Collector-Emitter Voltage IC=1mA, IB=0 20 V
Emitter Base Voltage IC=100µA, IC=0 7 V
Collector Cut-off Current VCB=10V, IE=0 0.1 µA
Collector Cut-off Current VCE=10V, IB=0 1 µA
Emitter Cut-off Current VEB=7V, IC=0 0.1 µA
DC Current Gain VCE=2V, IC=0.5A
Current Gain Band Width Product VCE=6V, IC=50mA 150 MHz
Collector Output Capacitance VCB=20V, IE=0, f=1MHz 23 pF
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
V
=2V, IC=2A
CE
230
150
600
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Typical Characteristics
FJN965
14
12
10
8
6
4
[mA], COLLECTOR CURRENT
C
I
2
0
0246810
IB=200mA
IB=20mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
[A], COLLECTOR CURRENT
C
I
0.2
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VBE[V], BASE-EMITTER VOLTAGE
25oCTa=125oC
Figure 1. Static Characteristic Figure 2. Base-Emitter On Voltage
1000
VCE=2V
Ta=125oC
Ta=25oC
Ta=-40oC
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10 100
IC[A], COLLECTOR CURRENT
10
1
0.1
Ta=125oC
0.01
Ta=25oC
(sat)[V], SATURATION VOLTAGE
Ta=-40oC
CE
V
1E-3
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
-40oC
IC=30I
VCE=2V
B
Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage
10
1
Ta=-400C
Ta=250C
Ta=1250C
(sat)[V], SATURATION VOLTAGE
BE
V
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CURRE NT
Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
IC=30I
B
100
80
60
40
20
[pF], OUTPUT CAPACITANCE
ob
C
0
110100
IE=0,f=1MHZ
VCB[V], COLLECTOR-BASE VOLTAGE
Rev. A2, August 2002
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