Fairchild Semiconductor FJN5471 Datasheet
FJN5471
For Output Amplifier of Electronic Flash Unit
• High DC Currrent Gain
• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage
FJN5471
1
1. Emitter 2. Collector 3. Base
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 7 V
Collector Current 5 A
Collector Dissipation 0.75 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=3A, IB=0.1A 0.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=3A, IB=0.1A 1.5 V
V
BE
f
T
C
ob
Collector-Emitter Voltage IC=1mA, IB=0 20 V
Emitter Base Voltage IC=100µA, IC=0 7 V
Collector Cut-off Current VCB=10V, IE=0 0.1 µA
Emitter Cut-off Current VEB=7V, IC=0 0.1 µA
DC Current Gain VCE=2V, IC=0.5A 700 1000
Current Gain Band Width Product VCE=6V, IC=50mA 150 MHz
Collector Output Capacitance VCB=20V, IE=0, f=1MHz 25 pF
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter Max Units
R
θjA
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
Thermal Resistance, Junction to Ambient 165 °C/W
TC=25°C unless otherwise noted
Typical Characteristics
FJN5471
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
012345
IB=14mA
IB=12mA
IB=10mA
IB=8mA
IB=6mA
IB=4mA
IB=2mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Base-Emitter On Voltage
Ta=125oC
1000
Ta=25oC
Ta=-40oC
100
, DC CURRENT GAIN
FE
h
10
0.1 1 10 100
IC[A], COLLECTOR CURRENT
VCE=2V
8
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Ta=125oC
25oC
VCE=2V
-40oC
VBE[V], BASE-EMITTER VOLTAGE
1
0.1
0.01
(sat)[V], SATURATION VOLTAGE
CE
V
1E-3
0.1 1 10
Ta=125oC
Ta=25oC
Ta=-40oC
IC=30I
B
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage
10
Ta=-40oC
1
Ta=25oC
(sat)[V], SATURATION VOLTAGE
BE
V
0.1
0.1 1 10
IC[A], COLLECTOR CURRE NT
Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Ta=125oC
IC=30I
B
80
60
40
20
[pF], OUTPUT CA PACITANCE
ob
C
0
1 10 100
IE=0,f=1MHZ
VCB[V], COLLECTOR-BASE VOLTAGE
Rev. A1, August 2002
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