Fairchild Semiconductor FJN4311R Datasheet
FJN4311R
FJN4311R
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=22KΩ)
• Complement to FJN3311R
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -40 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current -100 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.3 V
V
CE
C
ob
f
T
R Input Resistor 15 22 29 KΩ
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -40 V
Collector-Emitter Breakdown Voltage IE= -1mA, IB=0 -40 V
Collector Cut-off Current VCB= -30V , IE=0 -0.1 µA
DC Current Gain VCE= -5V, IC= -1mA 100 600
Output Capacitance VCB= -10V , IE=0
Current Gain Bandwidth Product VCE= -10V , IC= -5mA 200 MHz
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
f=1MHz
Equivalent Circuit
R
B
5.5 pF
C
E
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
FJN4311R
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Loading...