Fairchild Semiconductor FJN3312R Datasheet
FJN3312R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=47KΩ)
• Complement to FJN4312R
FJN3312R
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 5 V
Collector Current 100 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.3 V
V
CE
C
ob
f
T
R Input Resistor 32 47 62 KΩ
Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
Collector-Emitter Breakdown Voltage IE=1mA, IB=0 40 V
Collector Cut-off Current VCB=30V, IE=0 0.1 µA
DC Current Gain VCE=5V, IC=1mA 100 600
Output Capacitance VCB=10V, IE=0
Current Gain Bandwidth Product VCE=10V, IC=5mA 250 MHz
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
f=1MHz
Equivalent Circuit
B
R
3.7 pF
C
E
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
FJN3312R
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
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