Fairchild Semiconductor FJN13003 Datasheet
FJN13003
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Electronic Ballast up to 21W
FJN13003
1
TO-92
1. Emitter 2. Collector 3.Base
NPN Silicon Transistor Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 9 V
Collector Current (DC) 1.5 A
*Collector Current (Pulse) 3 A
Base Current (DC) 0.75 A
*Base Current (Pulse) 1.5 A
Collector Power Dissipation(Ta=25°C) 1.1 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=0.5A, IB=0.1A 0.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=0.5A, IB=0.1A 1.0 V
V
BE
f
T
t
ON
t
STG
t
F
Collector-Base Breakdown Voltage IC=500µA, IE=0 700 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 V
Emitter-Base Breakdown Voltage IE=500µA, IC=0 9 V
Emitter Cut-off Current VEB=9V, IC=0 10 µA
DC Current Gain VCE=2V, IC=0.5A 9 21
Current Gain Bandwidth Product VCE=10V, IC=0.1A 4 MHz
Turn ON Time VCC=125V, IC=1A,
Storage Time 4.0 µs
Fall Time 0.7 µs
TC=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=2V, IC=1.0A 5
V
CE
=1.0A, IB=0.25A 1.0 V
I
C
=1.5A, IB=0.5A 3.0 V
I
C
=1.0A, IB=0.25A 1.2 V
I
C
=0.2A, IB2=-0.2A,
I
B1
= 125Ω
R
L
1.1 µs
©2001 Fairchild Semiconductor Corporation Rev. A, July 2001
FJN13003
Typical Characteristics
2.0
1.6
IB = 500mA
1.2
0.8
[A], COLLECTOR CURRENT
0.4
C
I
0.0
012345
VCE [V], COLLECTOR -EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
IC = 4 I
B
1
(Continued)
IB = 100mA
IB = 50mA
IB = 0mA
Ta = 125oC
Ta = 25oC
Ta= - 40oC
Ta = 125oC
VCE = 2V
100
Ta = 25oC
Ta = - 40oC
10
1
, DC CURRENT GAIN
FE
h
0.1
1m 10m 100m 1 10
IC [A], COLLECTOR CURR ENT
10
IC = 4 I
B
Ta = - 40oC
1
Ta = 25oC
(SAT) [V], SATURATION VOLTAGE
BE
V
0.1
0.01 0.1 1 10
Ta = 125oC
IC [A], COLLECTOR CURRENT
0.1
(SAT) [V], SATURATION VOLTAGE
CE
V
0.01
0.01 0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
10
t
1
0.1
[µs], SWITCH ING TIME
F
& t
t
STG
IC= 5IB1= - 5I
VCC = 125V
0.01
0.1 1
STG
t
F
B2
IC [A], COLLECTOR CURRENT
1.4
1.2
1.0
0.8
0.6
0.4
0.2
[W], COLLECTOR POWER DISSIPATION
C
0.0
P
0 25 50 75 100 125 150 175
Ta [oC], AMBIENT TEMPERATURE
Figure 5. Resistive Loa d Switching Time Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A, July 2001
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