Fairchild Semiconductor FFAF20U20DN Datasheet
FFAF20U20DN
Features
• Ultrafast with soft recovery
• Low forward voltage
Applications
• Power switching circuits
• Output rectifiers
• Freewheeling diodes
• Switc hing mod e po w er supply
1 2 3
ULTRA FAST RECOVERY POWER RECTIFIER
TO-3PF
FFAF20U20DN
1. Anode 2.Cathode 3. Anod e
Absolute Maximum Ratings
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
T
J, TSTG
Peak Repetit iv e Reve rse Voltage 200 V
Average Rectified Forward Current @ TC = 100°C20 A
Non-repetitive Peak Surge Current
60Hz Single H a lf- Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
(per diode) TC=25°°°°C unless otherwise noted
200 A
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Electrical C haract eri stics
Symbol Parameter Min. Typ.. Max. Units
V
FM
*
I
RM
*
t
rr
I
rr
Q
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maxi mum Ther m al Resis t ance, Junct ion to C ase 2.1 °C/W
(per diode) TC=25 °°°°C unless oth erw is e note d
Maximum Instantaneous Forward Voltage
I
I
Maximum Instantaneous Reverse Current
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
=20A, di/dt = 200A/µs)
F
Avalanche Energy 0.5 - - mJ
= 20A
F
= 20A
F
@ rated V
= 25 °C
T
C
T
= 100 °C
C
TC = 25 °C
R
T
= 100 °C
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.2
1.0
20
200
40
4.0
80
V
µA
ns
A
nC
©2000 Fai r ch i ld Semiconductor Inter national
Rev. F, September 2000
Typical C h aracteristic sTypical C h aracteristic s
FFAF20U20DN
80
[A]
F
10
TC = 100oC
TC = 25oC
1
Forward Current , I
0.1
0.0 0.5 1.0 1.5 2.0
Forward Voltage , VF [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
600
500
400
300
200
Capacitance , Cj [pF]
100
0
0.1 1 10 100
Reverse Voltage , VR [V]
Typical Capacitance
at 0V = 589 pF
1000
100
A]
µ
[
R
10
1
0.1
Reverse Current , I
0.01
0.001
0 50 100 150 200
TC = 100oC
TC = 25oC
Reverse Voltage , VR [V]
Figure 2. Typical Reverse Current
vs. Revers e Voltag e
40
IF = 20A
[ns]
rr
35
30
25
Reverse Recovery Time , t
20
100 500
di/dt [A/µs]
Tc = 25oC
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. di/dt
8
7
[A]
rr
6
5
4
3
2
1
Reverse Recovery Current , I
0
100 500
IF = 20A
TC = 25oC
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Current
30
[A]
25
F(AV)
20
15
10
5
DC
Averag e Forwa rd Cur rent , I
0
60 80 100 120 140 160
Case Temperature , TC [oC]
Figure 6. Forward Current Derati ng Curve
vs. di/dt
©2000 Fai r ch i ld Semiconductor Inter national Rev. F, September 2000
Loading...