Fairchild Semiconductor FFAF10U170S Datasheet

Features

• High voltage and high reliability

• High speed switching

• Low forward voltage

FFAF10U170S

FFAF10U170S

Applications

• Suitable for damper diode in horizontal
deflection circuits

1 2

TO-3PF

1. Cathode 2. Anode

DAMPER DIODE

Absolute Maximum Ratings T

Symbol Parameter Value Units

V

RRM

I

F(AV)

I

FSM

T

J, TSTG

Peak Repetitive Reverse Voltage 1700 V
Average Rectified Forward Current @ TC = 125°C10 A
Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

Operating Junction and Storage Temperature - 65 to +150 °C

Thermal Characteristics

Symbol Parameter Value Units

R

θJC

Maximum Thermal Resistance, Junction to Case 1.5 °C/W

Electrical Characteristics

Symbol Parameter Min. Typ. Max. Units

V

FM

*

I

RM

*

t

rr

t

fr

V

FRM

* Pulse Test: Pulse Width=300µs, Duty Cycle=2%

Maximum Instantaneous Forward Voltage
I
I

Maximum Instantaneous Reverse Current

Maximum Reverse Rec overy T ime
(I

=1A, di/dt = 50A/µs)

F

Maximum Forward Recovery Time

=6.5A, di/dt = 50A/µs)

(I

F

Maximum Forward Recovery Voltage - - 13 V

@ rated V

=25°°°°C unless otherwise noted

C

TC=25 °°°°C unless otherwise noted

= 10A

F

= 10A

F

TC = 25 °C

R

= 25 °C

T

C

T

= 125 °C

C

= 125 °C

T

C

100 A

-

-

-

-

- - 140 ns

- - 400 ns

-

-

-

-

2.2

2.0

0.1
10

V

mA

©2001 Fairchild Semiconductor Corporation

Rev. A, June 2001

Typical CharacteristicsTypical Characteristics

FFAF10U170S

100

TJ = 125oC

[A]

F

10

TJ = 25oC

1

Forward Current , I

0.1
012345

Forward Voltag e , VF [V]

Figure 1. Typical Forward Voltage Drop

vs. Forward Current

200

Typical Capacitance

160

120

80

at 0V = 174 pF

10000

A]

µ

[

Reverse Curren t , I

R

1000

100

10

0.1

0.001

TJ = 125oC

TJ = 100oC

1

TJ = 25oC

0 300 600 900 1200 1500

Reverse Voltage , VR [V]

Figure 2. Typical Reverse Current

vs. Reverse Voltage

300

[ns]

rr

200

100

di/dt = 50A/µs

di/dt = 100A/µs

1700

Capacitance , Cj [pF]

40

0

0.1 1 10 100

Reverse Voltage , VR [V]

Figure 3. Typical Junction Capacitance

1500

[nC]

rr

1200

900

600

300

di/dt = 100A/µs

di/dt = 50A/µs

Stored Recovery Charge , Q

0

12345678910

Forward Current , IF [A]

Figure 5. Typical Stored Charge

vs. Forward Current

Reverse Recovery Time , t

0

12345678910

Forward Current , IF [A]

Figure 4. Typical Rever se Recovery Time

vs. Forward Current

12

[A]

F(AV)

10

8

6

4

2

Average Forward Current , I

0

80 100 120 140 160

DC

Case Temperature , TC [oC]

Figure 6. Forward Current Derating Curve

©2001 Fairchild Semiconductor Corporation Rev. A, June 2001