Fairchild Semiconductor FFA15U20DN Datasheet

FFA15U20DN

Features

• Ultrafast with soft recovery

• Low forward voltage

Applications

• Power switching circuits

• Output rectifiers

• Freewheeling diodes

• Switc hing mod e po w er supply

1 2 3

ULTRA FAST RECOVERY POWER RECTIFIER

TO-3P

FFA15U20DN

1. Anode 2.Cathode 3. Anod e

Absolute Maximum Ratings

Symbol Parameter Value Units

V

RRM

I

F(AV)

I

FSM

T

J, TSTG

Peak Repetit iv e Reve rse Voltage 200 V
Average Rectified Forward Current @ TC = 100°C15 A
Non-repetitive Peak Surge Current

60Hz Single H a lf- Sine Wave

Operating Junction and Storage Temperature - 65 to +150 °C

(per diode) TC=25°°°°C unless otherwise noted

150 A

Thermal Characteristics

Symbol Parameter Value Units

R

θJC

Electrical C haract eri stics

Symbol Parameter Min. Typ. Max. Units

V

FM

*

I

RM

*

t

rr

I

rr

Q

rr

W

AVL

* Pulse Test: Pulse Width=300µs, Duty Cycle=2%

Maxi mum Ther m al Resis t ance, Junct ion to C ase 3.1 °C/W

(per diode) TC=25 °°°°C unless oth erw is e note d

Maximum Instantaneous Forward Voltage
I
I

Maximum Instantaneous Reverse Current

Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I

=15A, di/dt = 200A/µs)

F

Avalanche Energy 0.5 - - mJ

= 15A

F

= 15A

F

@ rated V

= 25 °C

T

C

T

= 100 °C

C

TC = 25 °C

R

T

= 100 °C

C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.2

1.0

15

150

40

3.5
70

V

µA

ns

A

nC

©2000 Fai r ch i ld Semiconductor Inter national

Rev. F, September 2000

Typical C h aracteristic s

FFA15U20DN

50

10

[A]

F

TC = 100oC

TC = 25oC

1

Forward Current , I

0.1

0.0 0.5 1.0 1.5 2.0

Forward Voltage , VF [V]

Figure 1. Typical Forward Voltage Drop

vs. Forward Current

400

300

200

Typical Ca pac ita nce
at 0V = 404 pF

1000

100

A]

µ

[

R

10

1

0.1

Reverse Current , I

0.01

0.001
0 50 100 150 200

TC = 100oC

TC = 25oC

Reverse Voltage , VR [V]

Figure 2. Typical Reverse Current

vs. Revers e Voltag e

40

[ns]

rr

35

30

IF = 15A
Tc = 25oC

Capacitance , Cj [pF]

100

0

0.1 1 10 100

Reverse Voltage , VR [V]

Figure 3. Typical Junction Capacitance

8

7

[A]

rr

6

5

4

3

2

1

Reverse Recovery Current , I

0

100 500

IF = 15A
TC = 25oC

di/dt [A/µs]

Figure 5. Typical Reverse Recovery Current

vs. di/dt

25

Reverse Recovery Time , t

20

100 500

di/dt [A/µs]

Figure 4. Typical Reverse Recovery Time

vs. di/dt

20

[A]

F(AV)

15

10

5

DC

Averag e Forwa rd Cur rent , I

0

60 80 100 120 140 160

Case Temperature , TC [oC]

Figure 6. Forward Current Derati ng Curve

©2000 Fai r ch i ld Semiconductor Inter national Rev. F, September 2000