Fairchild Semiconductor FDS6675 Datasheet

October 1998

FDS6675

Single P-Channel, Logic Level, PowerTrenchTM MOSFET

General Description Features

This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate charge
for superior switching performance.

These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.

SOT-23

SuperSOTTM-8

D

D

D

D

FDS

6675

G

SO-8

1

pin

S

S

S

-11 A, -30 V. R
R

= 0.014 Ω @ VGS = -10 V,

DS(ON)

= 0.020 Ω @ VGS = -4.5 V.

DS(ON)

Low gate charge (30nC typical).
High performance trench technology for extremely low

R

.

DS(ON)

High power and current handling capability.

SO-8 SOT-223SuperSOTTM-6

5

6
7

8

SOIC-16

4

3
2
1

Absolute Maximum Ratings T

Symbol Parameter FDS6675 Units

V

DSS

V

GSS

I

D

Drain-Source Voltage -30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1a) -11 A

= 25oC unless otherwise noted

A

- Pulsed -50

P

D

Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1

TJ,T

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

© 1998 Fairchild Semiconductor Corporation

Operating and Storage Temperature Range -55 to 150 °C

STG

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

FDS6675 Rev.C1

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, I D = -250 µA -30 V
Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC -22 mV/oC

/∆T

J

Zero Gate Voltage Drain Current VDS = -24 V, V

= 0 V -1 µA

GS

TJ = 55°C -10 µA

I

GSSF

I

GSSR

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse VGS = -20 V, V

= 0 V -100 nA

DS

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 -1.7 -3 V
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 4.3 mV/oC

/∆T

J

Static Drain-Source On-Resistance VGS = -10 V, I D = -11 A 0.011 0.014

Ω

TJ =125°C 0.016 0.023

VGS = -4.5 V, I D = -9 A 0.015 0.02

I

D(ON)

g

FS

On-State Drain Current VGS = -10 V, VDS = -5 V -50 A
Forward Transconductance VDS = -10 V, I D = -11 A 32 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -15 V, VGS = 0 V,
Output Capacitance 870 pF

f = 1.0 MHz

3000 pF

Reverse Transfer Capacitance 360 pF

SWITCHING CHARACTERISTICS (Note 2)

t
t

t
t
Q
Q
Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time V
Turn - On Rise Time

= -15 V, I D = -1 A 12 22 ns

DS

V

GEN

= -10 V, R

GEN

= 6 Ω

16 27 ns

Turn - Off Delay Time 50 80 ns
Turn - Off Fall Time 100 140 ns
Total Gate Charge VDS = -15 V, I D = -11 A, 30 42 nC
Gate-Source Charge V

= -5 V 9 nC

GS

Gate-Drain Charge 11 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Notes:

1. R

JA

θ

guaranteed by design while R

Maximum Continuous Drain-Source Diode Forward Current -2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

(Note 2) -0.72 -1.2 V

θ

is

JC

a. 50OC/W on a 1 in2 pad

of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

b. 105OC/W on a 0.04 in

pad of 2oz copper.

2

c. 125OC/W on a 0.006 in2 pad

of 2oz copper.

FDS6675 Rev.C1

Typical Electrical Characteristics

50

V =-10V

GS

-6.0V

40

-4.5V

-3.5V

30

20

10

D

- I , DRAIN-SOURCE CURRENT (A)
0

0 0.6 1.2 1.8 2.4 3

- V , DRAIN-SOURCE VOLTAGE (V)

DS

-3.0V

Figure 1. On-Region Characteristics.

1.6

I = -11A

D

V = -10V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Figure 3. On-Resistance Variation with

Temperature.

2.5

V = -3.5V

2

GS

-4.0V

1.5

-4.5 V

-5.5V

DS(ON)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5
0 10 20 30 40 50

- I , DRAIN CURRENT (A)

D

-7.0V

-10V

Figure 2. On-Resistance Variation with

Dain Current and Gate Voltage.

0.05

0.04

0.03

0.02

0.01

DS(ON)

R , ON-RESISTANCE (OHM)

0

0 2 4 6 8 10

- V , GATE TO SOURCE VOLTAGE (V)

GS

I =-5.5A

D

T =125°C

J

25°C

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

50

V =-5.0V

DS

40

30

20

D

10

- I , DRAIN CURRENT (A)

0

1 2 3 4 5

- V , GATE TO SOURCE VOLTAGE (V)

GS

T =-55°C

J

25°C

125°C

50

V = 0V

GS

10

T =125°C

1

J

25°C

0.1

0.01

S

- I , REVERSE DRAIN CURRENT (A)

0.001
0 0.4 0.8 1.2

- V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6675 Rev.C1