Fairchild Semiconductor FDS6644 Datasheet
FDS6644
G
FDS6644
30V N-Channel PowerTrench MOSFET
September 2001
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
S
S
S
S
S
=25oC unless otherwise noted
A
Features
• 13 A, 30 V. R
• High performance trench technology for extremely
low R
DS(ON)
• Low gate charge (25 nC typical)
• High power and current handling capability
5
6
7
8
= 8.5 mΩ @ VGS = 10 V
DS(ON)
R
= 10.5 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage ±16 V
Drain Current – Continuous (Note 1a) 13 A
– Pulsed 52
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range –55 to +175
1.4
1.2
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Ambient (Note 1c) 125
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6644 FDS6644 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation
°C/W
°C/W
°C/W
FDS6644 Rev A (W)
Electrical Characteristics T
FDS6644
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temperature
Coefficient
J
ID = 250 µA, Referenced to 25°C 27 mV/°C
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.5 3 V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 11.8 A
VGS = 10 V, ID = 13 A,TJ=125°C
–5 mV/°C
6.5
7.5
10
On–State Drain Current VGS = 10 V, VDS = 5 V 26 A
Forward Transconductance VDS = 5 V, ID = 13 A 74 S
8.5
10.5
13
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 3087 pF
Output Capacitance 489 pF
Reverse Transfer Capacitance
VDS = 15 V, V
f = 1.0 MHz
GS
= 0 V,
185 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 10 20 ns
Turn–On Rise Time 12 22 ns
Turn–Off Delay Time 48 77 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 25 35 nC
Gate–Source Charge
Gate–Drain Charge 6.5 nC
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 13 A,
VGS = 5 V
10 20 ns
7.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
is determined by the user's board design.
mΩ
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted
on a minimum pad.
FDS6644 Rev A(W)
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