Fairchild Semiconductor FDS6612A Datasheet

July 1998

FDS6612A
Single N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description Features

This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.

These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.

SOT-23

SuperSOTTM-8

D

D

D

D

FDS

6612A

G

SO-8

1

pin

S

S

S

8.4 A, 30 V. R

= 0.022 Ω @ VGS = 10 V,

DS(ON)

R

= 0.030 Ω @ VGS = 4.5 V.

DS(ON)

Fast switching speed.
Low gate charge.
High performance trench technology for extremely low

R

.

DS(ON)

High power and current handling capability.

SO-8 SOT-223SuperSOTTM-6

5

6

7
8

SOIC-16

4

3
2

1

Absolute Maximum Ratings T

Symbol Parameter FDS6612A Units

V

DSS

V

GSS

I

D

Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1a) 8.4 A

= 25oC unless otherwise noted

A

- Pulsed 40

P

D

Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1

TJ,T

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

© 1998 Fairchild Semiconductor Corporation

Operating and Storage Temperature Range -55 to 150 °C

STG

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

FDS6612A Rev.C1

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V
Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 26 mV / oC

/∆T

J

Zero Gate Voltage Drain Current VDS = 24 V, V

= 0 V 1 µA

GS

TJ = 55°C 10 µA

I

GSSF

I

GSSR

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.6 3 V
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC -4.3 mV /oC

/∆T

J

Static Drain-Source On-Resistance VGS = 10 V, I D = 8.4 A 0.019 0.022

Ω

TJ =125°C 0.027 0.037

VGS = 4.5 V, I D = 7.2 A 0.026 0.03

I

D(ON)

g

FS

On-State Drain Current VGS = 10 V, VDS = 5 V 20 A
Forward Transconductance VDS = 15 V, I D= 8.4 A 19 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 185 pF

f = 1.0 MHz

830 pF

Reverse Transfer Capacitance 80 pF

SWITCHING CHARACTERISTICS (Note 2)

t
t

t
t
Q
Q
Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDS= 15 V, I D= 1 A 6 12 ns
Turn - On Rise Time

VGS = 10 V , R

GEN

= 6 Ω

10 18 ns

Turn - Off Delay Time 18 29 ns
Turn - Off Fall Time 5 12 ns
Total Gate Charge VDS = 15 V, I D = 8.4 A, 9 13 nC
Gate-Source Charge VGS= 5 V 2.8 nC
Gate-Drain Charge 3.1 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Notes:

1. R

JA

θ

guaranteed by design while R

Maximum Continuous Drain-Source Diode Forward Current 2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

(Note 2) 0.75 1.2 V

θ

is

JC

a. 50OC/W on a 1 in2 pad

of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

b. 105OC/W on a 0.04 in

pad of 2oz copper.

2

c. 125OC/W on a 0.006 in2 pad

of 2oz copper.

FDS6612A Rev.C1

Typical Electrical Characteristics

30

GS

V =10V

25

20

15

10

5

D

I , DRAIN-SOURCE CURRENT (A)

0

0 0.5 1 1.5 2 2.5 3

6.0V

4.5V

4.0V

3.5V

3.0V

2.5V

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.8

I = 8.4 A

D

1.6

V = 10 V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

2.5

V = 3.0V

GS

2

3.5V

1.5

DS(ON)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5
0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

4.0V

4.5V

6.0V

D

Figure 2. On-Resistance Variation with

Dain Current and Gate Voltage.

0.1

0.075

0.05

T = 125°C

A

0.025

DS(ON)

R , ON-RESISTANCE (OHM)

0

2 4 6 8 10

V , GATE TO SOURCE VOLTAGE (V)

GS

T = 25°C

A

10V

I = 4 A

D

Figure 3. On-Resistance Variation with

Temperature.

30

V = 5V

DS

25

20

15

10

D

I , DRAIN CURRENT (A)

5

0

0 1 2 3 4 5

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

A

25°C

125°C

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

30

V = 0V

GS

5
1

0.1

0.01

T = 125°C

A

25°C

-55°C

0.001

S

I , REVERSE DRAIN CURRENT (A)

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6612A Rev.C1