Fairchild Semiconductor FDS6609A Datasheet

FDS6609A

FDS6609A

P-Channel Logic Level PowerTrench



MOSFET

April 2000

PRELIMINARY

General Description

This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.

These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.

Applications

• DC/DC converter

• Load switch

• Motor Drive

D

D

D

D

G

S

S

SO-8

Absolute Maximum Ratings T

S

=25oC unless otherwise noted

A

Features

• –6.3 A, –30 V. R

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

5
6
7
8

= 0.032 Ω @ V

DS(ON)

R

= 0.05 Ω @ V

DS(ON)

GS

4
3
2
1

= -10 V

GS

= -4.5 V

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage –30 V
Gate-Source Voltage ±20 V
Drain Current – Continuous (Note 1a) -6.3 A

– Pulsed -40

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

(Note 1c)

Operating and Storage Junction Temperature Range -55 to +150 °C

1.2

1.0

W

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6609A FDS6609A 13’’ 12mm 2500 units

2000 Fairchild Semiconductor Corporation

°C/W
°C/W

FDS6609A Rev B(W)

Electrical Characteristics T

FDS6609A

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = -20 V VDS = 0 V –100 nA

VGS = 0 V, ID = -250 µ A
ID = -250 µA, Referenced to 25°C

-30 V

-22

mV/°C

µA

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.5 –3 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

ID = –250 µA, Referenced to 25°C

VGS = –10 V, ID = –7.0 A
VGS = –4.5 V, ID = –5.5 A
V

= –10 V, ID = –7.0A, TJ=125°C

GS

4 mV/°C

0.027

0.04

0.04

On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
Forward Transconductance VDS = –10 V, ID = –7.0 A 14.5 S

0.032

0.05

0.54

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 930 pF
Output Capacitance 278 pF
Reverse Transfer Capacitance

VDS = –15 V, V
f = 1.0 MHz

GS

= 0 V,

114 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)
r
d(off)
f

g
gs
gd

Turn–On Delay Time 12 21 ns
Turn–On Rise Time 11 20 ns

VDD = –15 V, ID = –1 A,
VGS = –10 V, R

GEN

= 6 Ω

Turn–Off Delay Time 33 52 ns
Turn–Off Fall Time
Total Gate Charge 18 29 nC
Gate–Source Charge 2.5 nC

VDS = –15 V, ID = –7.2 A,
VGS = –10 V

Gate–Drain Charge

13 23 ns

4.1 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current –2.1 A
Drain–Source Diode Forward

Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

θCA

VGS = 0 V, IS = –2.1 A (Note 2) –0.76 –1.2 V

is determined by the user's board design.

Ω

a) 50°/W when

mounted on a 1in
pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2

b) 105°/W when

mounted on a .04 in
pad of 2 oz copper

2

c) 125°/W when mounted on a

minimum pad.

FDS6609A Rev B(W)

Typical Characteristics

-4.5V

-5.0V

-6.0V

-7.0V

-8.0V

-9.0V

FDS6609A

40

VGS = -10.0V

32

24

16

, DRAIN CURRENT (A)

D

-I

8

0

0 1 2 3 4 5

-VDS, DRAIN TO SOURCE VOLTAGE (V)

-4.0V

-3.5V

-3.0V

2

VGS = -3.5V

1.8

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8

-4.0V

-4.5V

-5.0V

-6.0V

0 10 20 30 40

-ID, DIRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6
ID = -7A

VGS = -10V

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

0.15

0.12

0.09

0.06

, ON-RESISTANCE (OHM)

0.03

DS(ON)

R

0

2 4 6 8 10

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125oC

TA = 25oC

-10.0V

ID = -3.6A

Figure 3. On-Resistance Variation with

Temperature.

30

VDS = -5V

25

20

15

10

, DRAIN CURRENT (A)

D

-I

5

0

1 2 3 4 5

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55oC

125oC

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6609A Rev B(W)