Fairchild Semiconductor FDS6572A Datasheet

FDS6572A

FDS6572A

20V N-Channel PowerTrench MOSFET

September 2001

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R

and fast switching speed.

DS(ON)

Applications

• DC/DC converter

D

D

D

D

G

S

SO-8

Absolute Maximum Ratings T

S

S

=25oC unless otherwise noted

A

Features

• 16 A, 20 V. R

• Low gate charge (57 nC)

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

5
6
7
8

= 6 mΩ @ VGS = 4.5 V

DS(ON)

R

= 8 mΩ @ VGS = 2.5 V

DS(ON)

4
3
2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 20 V
Gate-Source Voltage ±12 V
Drain Current – Continuous (Note 1a) 16 A

– Pulsed 80

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)
(Note 1c)

Operating and Storage Junction Temperature Range –55 to +175

1.2

1.0

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6572A FDS6572A 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation

°C/W
°C/W

FDS6572A Rev C (W)

Electrical Characteristics T

FDS6572A

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C 12 mV/°C

20 V

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C

VGS = 4.5 V, ID = 16 A
VGS = 2.5 V, ID = 14 A
VGS = 4.5 V, ID = 16 A,TJ=125°C

0.6 0.8 1.5 V
–4 mV/°C

5.7

On–State Drain Current VGS = 4.5 V, VDS = 5 V 40 A
Forward Transconductance VDS = 5 V, ID = 16 A 96 S

4

6

5

8
9

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 5914 pF
Output Capacitance 1433 pF
Reverse Transfer Capacitance

VDS = 10 V, V
f = 1.0 MHz

GS

= 0 V,

797 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

Turn–On Delay Time 21 34 ns
Turn–On Rise Time 25 40 ns
Turn–Off Delay Time 102 163 ns
Turn–Off Fall Time

g

gs

gd

Total Gate Charge 57 80 nC
Gate–Source Charge 10 nC
Gate–Drain Charge

VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R

GEN

= 6 Ω

VDS = 10 V, ID = 16 A,
VGS = 4.5 V

66 106 ns

16 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward

Voltage

is guaranteed by design while R

θJC

θCA

VGS = 0 V, IS = 2.1 A (Note 2) 0.6 1.2 V

is determined by the user's board design.

µA

mΩ

a) 50°C/W when

mounted on a 1in
pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2

b) 105°C/W when

mounted on a .04 in
pad of 2 oz copper

2

c) 125°C/W when mounted on a

minimum pad.

FDS6572A Rev C (W)