Fairchild Semiconductor FDS6375 Datasheet

FDS6375

Single P-Channel 2.5V Specified PowerT renchTM MOSFET

FDS6375

February 1999

General Description

This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.

These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.

Applications

• DC/DC converter

• Load switch

• Battery Protection

D

D

D

D

G

S

SO-8

Absolute Maximum Ratings

S

S

TA = 25°C unless otherwise noted

Features

• -8.0 A, -20 V. R

R

= 0.024 Ω @ V

DS(on)

= 0.032 Ω @ V

DS(on)

= -4.5 V

GS

= -2.5 V.

GS

• Low gate charge (23nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low R

DS(ON)

.

• High power and current handling capability .

5

6
7
8

4

3
2

1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous

- Pulsed -50

Power Dissipation for Si ngl e Operat i on

Operating and Storage Junction Temperature Range -55 to +150

(Note 1a)

(Note 1a)
(Note 1b)

(Note 1c)

8V

±

-8.0 A

2.5 W

1.2
1

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, J unc tion-to-Ambient
Thermal Resistance, J unc tion-to-Case

(Note 1a)
(Note 1)

50
25

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS6375 FDS6375 13’’ 12mm 2500 units

1999 Fairchild Semiconductor Corporation

C

°

C/W

°

C/W

°

FDS6375 Rev. C

FDS6375

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min TypMax Units

Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V
Breakdown Voltage Temperature

DSS

Coefficient

J

ID = -250 µA, Referenced to 25°C-24mV/

Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.8 -1.5 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

ID = -250 µA, Referenced to 25°C5mV/

VGS = -4.5 V, ID = -8 A
V

= -4.5 V, ID = -8 A ,TJ=125°C

GS

V

= -2.5 V, ID = -7 A

GS

0.019

0.026

0.027

0.024

0.039

0.032

On-State Drain Current VGS = -4.5 V, VDS = -5.0 V -50 A
Forward Transconductance VDS = -5 V, ID = -8 A 28 S

A

µ

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 2260 pF
Output Capacitance 500 pF
Reverse Transfer Capacitance

= -10 V, VGS = 0 V,

V

DS

f = 1.0 MHz

205 pF

C

°

C

°

(Note 2)

Switching Characteristics

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn-On Delay Time 8 16 ns
Turn-On Rise Time 15 27 ns
Turn-Off Delay Time 98 135 ns
Turn-Off Fall Time
Total Gate Charge 23 33 nC
Gate-Source Charge 5.5 nC
Gate-Drain Charge

V

= -10 V, ID = -1 A,

DD

V

= -4.5 V, R

GS

= -10 V, ID = -8 A,

V

DS

V

= -5 V,

GS

GEN

= 6

Ω

35 55 ns

4nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:
1: R

θJA

drain pins. R

Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current -2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the

is guaranteed by design while R

θJC

a) 50° C/W when

mounted on a 0.5 in
pad of 2 oz. copper.

is determined by the user's board design.

θJA

2

b) 105° C/W when

mounted on a 0.02 in
pad of 2 oz. copper.

(Note 2)

-0.75 -1.2 V

c) 125° C/W when

2

mounted on a 0.003 in
pad of 2 oz. copper.

2

FDS6375 Rev. C

T ypical Characteristics

FDS6375

50

VGS= -4.5V

40

30

20

, DRAIN CURRENT (A)

D

-I

10

0

012345

-3.5V

-2.5V

-2.0V

-1.5V

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

2.5

2

1.5

, NORMALIZED

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.5

VGS= -2.5V

0 1020304050

-3.0V

-3.5V

, DRAIN CURRENT (A)

-I

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation

with Drain Current and Gate V oltage.

1.6
ID = -8A

= -10V

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.1

0.08

0.06

0.04

, ON RESISTANCE (OHM)

0.02

DS(ON)

R

0

1 1.5 2 2.5 3 3.5 4 4.5 5

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TJ= 125oC

25oC

-4.5V

ID= -4A

Figure 3. On-Resistance Variation

with Temperature.

20

VDS= -5V

16

12

8

, DRAIN CURRENT (A)

D

-I

4

0

0.511.522.5

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TJ= -55oC

125oC

o

25

C

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

100

VGS= 0

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TJ=125oC

25oC

-55oC

, BODY DIODE VOLTAGE (V)

-V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward V oltage

Variation with Source Current

and Temperature.

FDS6375 Rev. C