Fairchild Semiconductor FDS4953 Datasheet
February 1999
FDS4953
Dual P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description Features
These P-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
SOT-23
SuperSOTTM-8
D2
D2
D1
D1
FDS
4953
G2
S2
G1
1
SO-8
pin
S1
-5 A, -30 V. R
R
= 0.053 Ω @ VGS = -10 V,
DS(ON)
= 0.095 Ω @ VGS = -4.5V.
DS(ON)
Low gate charge (8nC typical).
High performance trench technology for extremely low
R
.
DS(ON)
High power and current handling capability.
SO-8 SOT-223SuperSOTTM-6
5
6
7
8
SOIC-16
4
3
2
1
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
Drain-Source Voltage -30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1a) -5 A
= 25oC unless otherwise noted
A
- Pulsed -20
P
D
Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ,T
THERMAL CHARACTERISTICS
R
JA
θ
R
JC
θ
© 1999 Fairchild Semiconductor Corporation
Operating and Storage Temperature Range -55 to 150 °C
STG
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
FDS4953 Rev.C
Electrical Characteristics (T
= 25 OC unless otherwise noted )
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
∆BV
I
DSS
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V
Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC -20 mV/oC
/∆T
J
Zero Gate Voltage Drain Current VDS = -24 V, V
= 0 V -1 µA
GS
TJ = 55°C -10 µA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse VGS = -20 V, V
= 0 V -100 nA
DS
ON CHARACTERISTICS (Note 2)
V
∆V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 -1.7 -3 V
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 4 mV/oC
/∆T
J
Static Drain-Source On-Resistance VGS = -10 V, ID = -5 A 0.04 0.053
Ω
TJ =125°C 0.055 0.085
VGS = -4.5 V, ID = -3.3 A 0.058 0.095
I
D(ON)
g
FS
On-State Drain Current VGS = -10 V, VDS = -5 V -20 A
Forward Transconductance VDS = -10 V, ID = -5 A 11 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = -15 V, VGS = 0 V,
Output Capacitance 220 pF
f = 1.0 MHz
750 pF
Reverse Transfer Capacitance 100 pF
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time V
Turn - On Rise Time
= -15 V, ID = -1 A 12 22 ns
DS
V
GEN
= -10 V, R
GEN
= 6 Ω
14 25 ns
Turn - Off Delay Time 24 38 ns
Turn - Off Fall Time 16 27 ns
Total Gate Charge VDS = -15 V, ID = -5 A, 8 12 nC
Gate-Source Charge V
= -5 V 1.8 nC
GS
Gate-Drain Charge 3 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Notes:
1. R
JA
θ
guaranteed by design while R
Maximum Continuous Drain-Source Diode Forward Current -1.3 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
is determined by the user's board design.
CA
θ
(Note 2) -0.75 -1.2 V
JC
θ
is
a. 78OC/W on a 0.5 in
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
2
b. 125OC/W on a 0.02 in
pad of 2oz copper.
2
c. 135OC/W on a 0.003 in
pad of 2oz copper.
2
FDS4953 Rev.C
Typical Electrical Characteristics
20
V =-10V
GS
-6.0V
15
10
5
D
- I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5
-4.5V
-4.0V
-3.5V
-3.0V
- V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.6
I =5A
D
V =-10V
GS
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
2.5
V = -3.5V
GS
2
-4.0 V
1.5
DS(ON)
1
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.5
0 5 10 15 20
-4.5 V
-5.5 V
-7.0 V
- I , DRAIN CURRENT (A)
D
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage.
0.2
0.15
0.1
0.05
DS(ON)
R , ON-RESISTANCE (OHM)
0
2 4 6 8 10
- V , GATE TO SOURCE VOLTAGE (V)
GS
I =-2.5A
T = 125°C
-10V
D
J
25°C
Figure 3. On-Resistance Variation with
Temperature.
20
V = -5V
DS
16
12
8
D
- I , DRAIN CURRENT (A)
4
0
1 2 3 4 5 6
-V , GATE TO SOURCE VOLTAGE (V)
T = -55°C
J
25°C
125°C
GS
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
V = 0V
10
GS
T = 125°C
1
0.1
0.01
0.001
S
-I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
J
25°C
-55°C
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS4953 Rev.C
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