Fairchild Semiconductor FDS4935A Datasheet
March 2002
FDS4935A
Dual 30V P-Channel PowerTrench
MOSFET
FDS4935A
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been opt imized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
Applications
• Power management
• Load switch
• Battery protection
D1
D
D1
D
D2
D
D2
D
SO-8
Pin 1
SO-8
S2
Absolute Maximum Ratings T
G1
G
S1
S
G2
S
S
o
=25
C unless otherwise noted
A
Features
• –7 A, –30 V R
R
• Low gate charge (15nC typical)
• Fast switching speed
• High performance trench te chnology for extremely
low R
• High power and current handling capability
DS(ON)
5
6
7
8
= 23 mΩ @ VGS = –10 V
DS(ON)
= 35 mΩ @ VGS = –4.5 V
DS(ON)
Q1
Q2
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage –30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) –7 A
– Pulsed –30
PD
PD
TJ, T
STG
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +175
(Note 1c)
±20
1
0.9
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1) 40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4935A FDS4935A 13’’ 12mm 2500 units
2002 Fairchild Semiconductor Corporation
FDS4935A Rev A(W)
A
FDS4935
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –10
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = –20 V, VDS = 0 V –100 nA
Gate–Body Leakage, Reverse VGS = 20 V, VDS = 0 V 100 nA
= 0 V, ID = –250 µA
V
GS
= –250 µA, Referenced to 25°C
I
D
–30 V
–24
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –10 V, VDS = –5 V –30 A
D(on)
= VGS, ID = –250 µA
V
DS
I
= –250 µA, Referenced to 25°C
D
VGS = –10 V, ID = –7 A
= –4.5 V, ID = –5.5 A
V
GS
= –10 V, ID = –7 A, TJ=125°C
V
GS
gFS Forward Transconductance VDS = –5 V, ID = –7 A 19 S
–1 –1.6 –3 V
4.4
19
28
26
23
35
34
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 1233 pF
iss
C
Output Capacitance 311 pF
oss
C
Reverse Transfer Capacitance
rss
= –15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
152 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 13 23 ns
d(on)
tr Turn–On Rise Time 10 20 ns
t
Turn–Off Delay Time 48 77 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 15 21 nC
Qgs Gate–Source Charge 4.4 nC
Qgd Gate–Drain Charge
= –15 V, ID = –1 A,
V
DD
= –10 V, R
V
GS
V
= –15 V, ID = –7 A,
DS
= –5 V
V
GS
GEN
= 6 Ω
25 40 ns
4.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
θCA
V
= 0 V, IS = –2.1 A (Note 2) –0.75 –1.2 V
GS
is determined by the user's board design.
b) 125°C/W when
mounted on a 0.02
in2 pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum pad.
FDS4935A Rev A(W)
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