Fairchild Semiconductor FDS4780 Datasheet
March 2003
FDS4780
40V N-Channel PowerTrench MOSFET
FDS4780
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
• 10.8 A, 40 V. R
• Low gate charge (30 nC)
• High performance trench technology for extremely
DS(ON)
5
6
7
8
low R
• High power and current handling capability
= 10.5 mΩ @ VGS = 10 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 40 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 10.8 A
– Pulsed 45
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +150
(Note 1c)
± 20
1.4
1.2
V
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient (Note 1c) 125
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2003 Fairchild Semiconductor Corpora tion
FDS4780 FDS4780 13’’ 11mm 2500 units
°C/W
°C/W
°C/W
FDS4780 Rev B (W)
FDS4780
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD=20V, ID=10.8A 240 mJ
IAS Drain-Source Avalanche Current 10.8 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
40 V
42
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–Resistance
On–State Drain Current VGS = 10 V, VDS = 5 V 22 A
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 10.8 A
= 10 V,ID = 10.8 A, TJ=115°C
V
GS
2 3.9 5 V
–8
8
10.5
13
21
mV/°C
mΩ
gFS Forward Transconductance VDS = 10 V, ID = 10.8 A 36 S
Dynamic Characteristics
C
Input Capacitance 1686 pF
iss
C
Output Capacitance 384 pF
oss
C
Reverse Transfer Capacitance
rss
V
= 20 V, V
DS
f = 1.0 MHz
= 0 V,
GS
185 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 11 22 ns
d(on)
tr Turn–On Rise Time 9 18 ns
t
Turn–Off Delay Time 30 48 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 30 40 nC
Qgs Gate–Source Charge 9 nC
Qgd Gate–Drain Charge
V
= 20 V, ID = 1 A,
DD
= 10 V, R
V
GS
GEN
= 6 Ω
VDS = 20 V, ID = 10.8 A,
VGS = 10 V
15 27 ns
10 nC
FDS4780 Rev B (W)
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