Fairchild Semiconductor FDS4770 Datasheet
FDS4770
40V N-Channel PowerTrench
MOSFET
March 2003
FDS4770
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings
G
G
S
S
S
S
S
TA=25oC unless otherwise noted
Features
• 13.2 A, 40 V. R
• Low gate charge (30 nC)
• High performance trench technology for extremely
low R
• High power and current handling capability
DS(ON)
5
6
7
8
= 10.5 mΩ @ VGS = 10 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 40 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed 45
PD
TJ, T
STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1a)
13.2 A
(Note 1a)
2.5
(Note 1b)
(Note 1c)
± 20
1.4
1.2
V
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2003 Fairchild Semiconductor Corporation
FDS4770 FDS4770 13’’ 11mm 2500 units
°C/W
°C/W
°C/W
FDS4770 Rev B (W)
FDS4770
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings
EAS Drain-Source Avalanche Energy Single Pulse, VDD=20V, ID=13.2A 370 mJ
IAS Drain-Source Avalanche Current 13.2 A
(Note 2)
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
∆T
I
Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
I
D(on)
Breakdown Voltage Temperature
DSS
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–Resistance
On–State Drain Current VGS = 10 V, VDS = 5 V 30 A
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 13.2 A
= 10 V,ID = 13.2 A, TJ=115°C
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 13.2 A 45 S
40 V
42
mV/°C
µA
2 3.9 5 V
–8
6 9 7.5
mV/°C
mΩ
10
Dynamic Characteristics
C
Input Capacitance 2819 pF
iss
C
Output Capacitance 600 pF
oss
C
Reverse Transfer Capacitance
rss
Switching Characteristics
t
Turn–On Delay Time 16 29 ns
d(on)
(Note 2)
tr Turn–On Rise Time 12 22 ns
t
Turn–Off Delay Time 41 66 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 47 67 nC
Qgs Gate–Source Charge 15 nC
Qgd Gate–Drain Charge
= 20 V, V
V
DS
GS
f = 1.0 MHz
= 20 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
= 20 V, ID = 13.2 A,
V
DS
= 10 V
V
GS
GEN
= 0 V,
291 pF
= 6 Ω
29 46 ns
14 nC
FDS4770 Rev B (W)
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