Fairchild Semiconductor FDS4675 Datasheet
FDS4675
FDS4675
40V P-Channel PowerTrench MOSFET
February 2001
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
Applications
• Power management
• Load switch
• Battery protection
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
• –11 A, –40 V R
R
• Fast switching speed
• High performance trench technology for extremely
low R
• High power and current handling capability
DS(ON)
5
6
7
8
= 0.013 Ω @ VGS = –10 V
DS(ON)
= 0.017 Ω @ VGS = –4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage ±20 V
GSS
ID Drain Current – Continuous (Note 1a)
– Pulsed
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.4 (steady state)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range -55 to +175 °C
–40
–11
–50
1.4
1.2
V
A
W
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 62.5 (steady state), 50 (10 sec)
Thermal Resistance, Junction-to-Ambient (Note 1c) 125
Thermal Resistance, Junction-to-Case (Note 1) 25
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2001 Fairchild Semiconductor Corporation FDS4675 Rev C(W)
FDS4675 FDS4675 13’’ 12mm 2500 units
FDS4675
Electrical Characteristics T
Symbol
Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
A
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –40 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = –32 V, VGS = 0 V –1 µA
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C –34 mV/°C
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.4 –3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
VGS = –10 V, ID = –11 A
VGS = –4.5 V, ID = –9.5 A
VGS=–10 V, ID =–11 A, TJ=125°C
4.6 mV/°C
10
13
13
15
m Ω
17
21
On–State Drain Current VGS = –10 V, VDS = –5 V –25 A
gFS Forward Transconductance VDS = –5 V, ID = –11 A 44 S
Dynamic Characteristics
C
Input Capacitance 4350 pF
iss
C
Output Capacitance 622 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = –20 V, V
f = 1.0 MHz
= 0 V,
GS
290 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 20 36 ns
d(on)
tr Turn–On Rise Time 29 46 ns
t
Turn–Off Delay Time 95 152 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 40 56 nC
Qgs Gate–Source Charge 11 nC
Qgd Gate–Drain Charge
VDD = –20 V, ID = –1 A,
VGS = –4.5 V, R
GEN
= 6 Ω
VDS = –20 V, ID = –11 A,
VGS = –4.5 V
60 96 ns
13 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD
Notes:
1. R
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
is determined by the user's board design.
θCA
VGS = 0 V, IS = –2.1 A (Note 2) –0.7 –1.2 V
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
FDS4675 Rev C(W)
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