Fairchild Semiconductor FDS4672A Datasheet
FDS4672A
40V N-Channel PowerTrench
MOSFET
FDS4672A
May 2001
General Description
This N-Channel MOSFET has been designed
specifically to i mprove the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM c ontrollers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
D
D
D
D
G
S
SO-8
Absolute Maximum Ratings T
S
S
o
=25
C unless otherwise noted
A
Features
• 11 A, 40 V. R
• High performance trench te chnology for extremely
low R
• Low gate charge (35 nC typical)
• High power and current handling capability
DS(ON)
5
6
7
8
= 13 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 40 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 11 A
– Pulsed 50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
±12
1.4
1.2
–55 to +175
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1) 25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4672A FDS4672A 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation
FDS4672A Rev C(W)
FDS4672A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
40 V
37
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–S t ate Drain Current VGS = 4.5 V, VDS = 5 V 50 A
D(on)
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
V
= 4.5 V, ID = 11 A
GS
V
=4.5 V, ID =11A, TJ=125°C
GS
gFS Forward Transconductance VDS = 5 V, ID = 11 A 65 S
0.8 1.2 2.0 V
–4
10
15
13
21
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 4766 pF
iss
C
Output Capacitance 346 pF
oss
C
Reverse Transfer Capacitance
rss
= 20 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
155 pF
Switching Characteristics (Note 2)
V
= 20 V, ID = 1 A,
t
Turn–On Delay Time 17 31 ns
d(on)
tr Turn–On Rise Time 9 18 ns
t
Turn–Off Delay Time 43 68 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 35 49 nC
Qgs Gate–Source Charge 7.8 nC
Qgd Gate–Drain Charge
DD
= 4.5 V, R
V
GS
V
= 20 V, ID = 11 A,
DS
= 4.5 V
V
GS
GEN
= 6 Ω
14 25 ns
8.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°/W when
mounted on a 1in
pad of 2 oz copper
2
VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
is determined by the user's board design.
θCA
b) 105°/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°/W when mounted on a
minimum pad.
FDS4672A Rev C(W)
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