Fairchild Semiconductor FDFS2P103A Datasheet
August 2002
A
FDFS2P103A
Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
FDFS2P103
General Description
The FDFS2P103A combines the exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier recti fier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low onstate resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
D
D
C
C
SO-8
Pin 1
A
Absolute Maximum Ratings T
G
S
A
o
=25
C unless otherwise noted
A
Features
• –5.3 A, –30V R
R
• V
< 0.35 V @ 1 A (TJ = 125°C)
F
V
< 0.25 V @ 1 A (TJ = 25°C)
F
• Schottky and MOSFET incorporated into single
power surface mount SO-8 package
• Electrically independent S chottky and MOSFET
pinout for design flexibility
A
A
S
G
= 59 mΩ @ VGS = –10 V
DS(ON)
= 92 mΩ @ VGS = –4.5 V
DS(ON)
81
72
63
54
C
C
D
D
Symbol Parameter Ratings Units
V
MOSFET Drain-Source Voltage
DSS
V
MOSFET Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a)
– Pulsed
PD
TJ, T
STG
V
Schottky Repetiti ve P eak Reverse Voltage 30 V
RRM
IO Schottky Average Forward Current (Note 1a) 1 A
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
Operating and Storage Junction Temperature Range
(Note 1c)
–30
±25
–5.3
–20
1
0.9
–55 to +150
V
V
A
W
°C
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDFS2P103A FDFS2P103A 13’’ 12mm 2500 units
2002 Fairchild Semiconductor Corporation
FDFS2P103A Rev C (W)
FDFS2P103A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1
DSS
I
Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA
GSS
Breakdown Voltage Temperature
Coefficient
J
= 0 V, ID = –250 µA
V
GS
I
= –250 µA,
D
Referenced to 25°C
–30 V
–22
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = –250 µA
V
DS
I
= –250 µA,
D
Referenced to 25°C
VGS = –10 V, ID = –5.3 A
= –4.5 V, ID = –4 A
V
GS
=–10 V, ID = –5.3A, TJ=125°C
V
GS
gFS Forward Transconductance VDS = –5V, ID = –5.3 A 8.9 S
–1 –1.8 –3 V
4.2
50
76
68
59
92
88
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 535 pF
iss
C
Output Capacitance 135 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance V
= –15 V, VGS = 0 V,
V
DS
f = 1.0 MHz
= 0 V, f = 1.0 MHz 4.7
GS
75 pF
Ω
Switching Characteristics (Note 2)
t
Turn–On Delay Time
d(on)
tr Turn–On Rise Time 16 28 ns
t
Turn–Off Delay Time 15 26 ns
d(off)
= –15 V, ID = –1 A,
V
DD
= –10 V, R
V
GS
GEN
= 6 Ω
tf Turn–Off Fall Time
Qg Tot al Gat e Charge 5.7 8 nC
= –15 V, ID = –5.3 A,
V
Qgs Gate–Source Charge 1.8 nC
Qgd Gate–Drain Charge
DS
V
GS
= –5 V
11 21 ns
10 19 ns
2.4 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A
VSD
Drain–Source Diode Forward
Voltage
V
= 0 V, IS = –1.3 A (Note 2)
GS
–0.8 –1.2
Schottky Diode Characteristics
IR Reverse Leakage VR = 30 V 160 500
225 280 mV
80 250 mV
305 350 mV
185 250 mV
380 420 mV
FDFS2P103A Rev C (W)
VF Forward Voltage
IF = 0.1A
IF = 1A
I
= 3A
F
TJ = 25°C
T
= 125°C
J
TJ = 25°C
= 125°C
T
J
= 25°C
T
J
µA
V
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