Fairchild Semiconductor FDFS2P103 Datasheet
September 2001
FDFS2P103
Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
FDFS2P103
General Description
The FDFS2P103 combines the exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier recti fier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low onstate resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
D
D
C
C
SO-8
Pin 1
A
Absolute Maximum Ratings T
G
S
A
o
=25
C unless otherwise noted
A
Features
• –5.3 A, –30V R
R
• V
< 0.52 V @ 1 A (TJ = 125°C)
F
V
< 0.57 V @ 1 A (TJ = 25°C)
F
• Schottky and MOSFET incorporated into single
power surface mount SO-8 package
• Electrically independent S chottky and MOSFET
pinout for design flexibility
A
A
S
G
= 59 mΩ @ VGS = –10 V
DS(ON)
= 92 mΩ @ VGS = –4.5 V
DS(ON)
81
72
63
54
C
C
D
D
Symbol Parameter Ratings Units
V
MOSFET Drain-Source Voltage
DSS
V
MOSFET Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a)
– Pulsed
PD
TJ, T
STG
V
Schottky Repetiti ve P eak Reverse Voltage 30 V
RRM
IO Schottky Average Forward Current (Note 1a) 1 A
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
Operating and Storage Junction Temperature Range
(Note 1c)
–30
±25
–5.3
–20
1
0.9
–55 to +150
V
V
A
W
°C
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDFS2P103 FDFS2P103 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation
FDFS2P103 Rev C(W)
FDFS2P103
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 25 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –25 V, VDS = 0 V –100 nA
= 0 V, ID = –250 µA
V
GS
I
= –250 µA,Referenced to 25°C
D
–30 V
–23
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
D(on)
= VGS, ID = –250 µA
V
DS
= –250 µA,Referenced to 25°C
I
D
VGS = –10 V, ID = –5.3 A
= –4.5 V, ID = –4 A
V
GS
=–10 V, ID =–5.3A, TJ=125°C
V
GS
gFS Forward Transconductance VDS = –5V, ID = –5.3 A 10 S
–1 –1.7 –3 V
4.5
46
70
63
59
92
88
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 528 pF
iss
C
Output Capacitance 132 pF
oss
C
Reverse Transfer Capacitance
rss
= –15 V, VGS = 0 V,
V
DS
f = 1.0 MHz
70 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 7 14 ns
d(on)
tr Turn–On Rise Time 13 24 ns
t
Turn–Off Delay Time 14 25 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 5.3 8 nC
Qgs Gate–Source Charge 2.2 nC
Qgd Gate–Drain Charge
= –15 V, ID = –1 A,
V
DD
= –10 V, R
V
GS
= –15 V, ID = –5.3 A,
V
DS
V
= –5 V
GS
GEN
= 6 Ω
9 17 ns
1.6 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A
VSD
Drain–Source Diode Forward
Voltage
V
= 0 V, IS = –1.3 A (Note 2)
GS
–0.7 –1.2 V
Schottky Diode Characteristics
IR Reverse Leakage VR = 30 V
VF Forward Voltage IF = 1A
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
15 100
µA
6 30 mA
0.41 0.57 V
0.32 0.52 V
FDFS2P103 Rev C(W)
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
(Note 1a) 78
(Note 1c) 135
(Note 1) 40
FDFS2P103
°C/W
°C/W
°C/W
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
FDFS2P103 Rev C(W)
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