Fairchild Semiconductor FDD6690A Datasheet
FDD6690A
(
)
N-Channel, Logic Level, PowerTrenchTM MOSFET
FDD6690A
February 1999
PRELIMINARY
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for superior
switching performance.
Features
• 46 A, 30 V. R
R
DS(ON)
DS(ON)
= 0.012 Ω @ V
= 0.016 Ω @ V
• Low gate charge (17nC typical).
= 10 V
GS
= 4.5 V.
GS
• Fast switching speed.
Applications
• DC/DC converter
• High performance trench technology for extremely
low R
DS(ON)
.
• Motor drives
D
D
G
G
S
TO-252
T
=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
Drain Current - Pulsed 100
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
Operating and Storage Junction Temperature Range -55 to +150
A
TA = 25oC
Note 1
(Note 1)
(Note 1a)
(Note 1b)
S
20 V
±
46
12
50
2.8
1.3
A
W
C
°
Thermal Characteristics
R
JC
θ
R
JA
θ
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
2.5
96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD6690A FDD6690A 13’’ 16mm 2500
1999 Fairchild Semiconductor Corporation
C/W
°
C/W
°
FDD6690A, Rev. B2
FDD6690A
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
W
DSS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Cu rrent 46 A
Off Characteristics
BV
∆
∆
I
DSS
I
GSSF
I
GSSR
BV
DSS
T
DSS
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate -Body Lea kage Current,
Forward
Gate -Body Lea kage Current,
Reverse
On Characteristics
V
∆
∆
R
I
D(on)
g
GS(th)
V
GS(th)
DS(on)
FS
T
J
Gate Threshold Vo ltage
Gate Threshold Vo ltage
Temperature Coefficient
Static Drain-Source
On-Resista n ce
On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 5 V, ID = 12 A 44 S
Parameter Test Condi t i ons Min Typ Max Uni t s
(Note 2)
TA = 25°C unless otherwise noted
(Note 1)
VDD = 15 V, ID = 46 A 150 mJ
V
= 0 V, ID = 250 µA
GS
I
= 250 µA, Referenced to
D
30 V
25
25°C
VGS = 20V, VDS = 0 V 100 nA
VGS = -20 V, VDS = 0 V -100 nA
V
= VGS, ID = 250 µA
DS
I
= 250 µA, Referenced to
D
11.63 V
-4
25°C
VGS = 10 V, ID = 12 A
V
= 10 V, ID = 12
GS
A,T
=125°C
J
= 4.5 V, ID =10 A
V
GS
.0009
.0015
.0120
0.012
0.019
0.016
mV/°C
A
µ
mV/°C
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance 1700 pF
Output Capacitance 340 pF
= 15 V, VGS = 0 V,
V
DS
f = 1.0 MHz
Reverse Transfer Capacitance
(Note 2)
Turn-On Delay Time 10 18 ns
Turn-On Rise Time 12 22 ns
V
= 15 V, ID = 1 A,
DD
V
= 10 V, R
GS
GEN
= 6
Ω
Turn-Off Delay Time 35 56 ns
Turn-Off Fal l Time
Total Gate Charge 17 23 nC
Gate-Source Charge 5 nC
= 15 V, ID = 12 A,
V
DS
V
= 5 V,
GS
Gate -Drain Charge
Drain-Source Diode Characteristics and Maximum Rating s
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
θJA
R
θJC
Maximum Continuous Drain-Source Diode Forward Current 2.3 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A
is guaranteed by design while R
is determined by the user's board design.
θCA
a) R
= 45oC/W when mounted
θJA
on a 1in2 pad of 2oz copper.
(Note 2)
b) R
= 96oC/W on a minimum
θJA
mounting pad.
140 pF
10 18 ns
6nC
0.72 1.3 V
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDD6690A, Rev. B2
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