Fairchild Semiconductor FDD6672A Datasheet
FDD6672A
FDD6672A
30V N-Channel PowerTrench MOSFET
May 2000
PRELIMINARY
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS( ON)
Applications
• DC/DC converter
Features
• 65 A, 30 V. R
• High performance trench technology for extremely
low R
DS(ON)
• Low gate charge (33 nC typical)
• High power and current handling capability
= 9.5 mΩ @ VGS = 4.5 V
DS(ON)
R
= 8 mΩ @ VGS = 10 V
DS(ON)
D
D
G
S
G
TO-252
S
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 65 A
– Pulsed 100
Maximum Power Dissipation @ TC = 25°C (Note 1)
@ TA = 25°C (Note 1a)
@ TA = 25°C (Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
±12
70
3.2
1.3
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case (Note 1) 1.8
Thermal Resistance, Junction-to-Ambient (Note 1b) 96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD6672A FDD6672A 13’’ 16mm 2500 units
2000 Fairchild Semiconductor Corporation
°C/W
°C/W
FDD6672A Rev B(W)
Electrical Characteristics T
FDD6672A
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C 20 mV/°C
30 V
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 13 A
VGS = 4.5 V, ID = 13 A, TJ=125°C
VGS = 10 V, ID = 14 A
0.8 1.2 2.0 V
-4 mV/°C
8.2
11.5
6.8
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 10 V, ID = 15 A 75 S
9.5
16
8
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 5070 pF
Output Capacitance 550 pF
Reverse Transfer Capacitance
VDS = 15 V, V
f = 1.0 MHz
GS
= 0 V,
230 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 17 25 ns
Turn–On Rise Time 18 25 ns
Turn–Off Delay Time 69 100 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 33 46 nC
Gate–Source Charge 7.5 nC
Gate–Drain Charge
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 15 A,
VGS = 4.5 V
29 42 ns
6.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
by design while R
Maximum Continuous Drain–Source Diode Forward Current 2.7 A
Drain–Source Diode Forward
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. R
is determined by the user's board design.
θCA
VGS = 0 V, IS = 2.7 A (Note 2) 0.7 1.2 V
is guaranteed
θJC
µA
a) R
= 40oC/W when
θJA
mounted on a 1in2 pad of
2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) R
= 96oC/W on a
θJA
minimum mounting pad.
FDD6672A Rev B(W)
Typical Characteristics
2.0V
3.0V
DRAIN-SOURCE ON-RESISTANCE
3.0V
3.5V
4.0V
4.5V
DRAIN-SOURCE ON-RESISTANCE
-55oC
25oC
, REVERSE DRAIN CURRENT (A)
-55oC
FDD6672A
50
VGS = 4.5V
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
3.5V
0 0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
1.5
1.3
, NORMALIZED
1.1
DS(ON)
R
0.9
0 10 20 30 40 50 60
VGS = 2.5V
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 15A
VGS = 10V
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
0.025
0.02
0.015
0.01
, ON-RESISTANCE (OHM)
0.005
DS(ON)
R
0
0 2 4 6 8 10
TA = 125oC
TA = 25oC
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 6 A
Figure 3. On-Resistance Variation with
Temperature.
60
VDS = 5V
45
30
, DRAIN CURRENT (A)
D
15
I
0
0.5 1 1.5 2 2.5 3
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
TA = 125oC
1
0.1
0.01
S
I
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
25oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD6672A Rev B(W)
Loading...