Fairchild Semiconductor FDD6670A Datasheet

FDD6670A

(

)

N-Channel, Logic Level, PowerTrench







MOSFET

FDD6670A

February 2000

General Description

This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.

Features

• 66 A, 30 V. R

R

DS(on)

DS(on)

= 0.008 Ω @ V

= 0.010 Ω @ V

• Low gate charge (35nC typical).

= 10 V

GS

= 4.5 V.

GS

• Fast switching speed.

Applications

• DC/DC converter

• High performance trench technology for extremely

low R

DS(on)

.

• Motor drives

D

D

G

G

S

TO-252

=25oC unless otherwise noted

T

Absolute Maximum Ratings

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 30 V
Gate-Source Voltage
Maximum Drain Current -Continuous
TA = 25oC
Maximum Drain Current -Pulsed 100
Maximum Power Dissipation TC = 25oC

TA = 25oC
Operating and Storage Junction Temperature Range -55 to +150

C

TA = 25oC

Note 1

(Note 1a)

(Note 1)

(Note 1a)

(Note 1b)

S

20 V

±

66
15

70

3.2

1.3

A

W

C

°

Thermal Characteristics

R

JC

θ

R

JA

θ

Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient

(Note 1)
(Note 1a)
(Note 1b)

1.8
40
96

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD6670A FDD6670A 13’’ 16mm 2500

2000 Fairchild Semiconductor Corporation

C/W

°

C/W

°

C/W

°

FDD6670A, Rev. C

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

FDD6670A

Drain-Source Avalanche ratings

W

DSS

I

AR

Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Av alanche Current 66 A

Off Characteristics

BV

DSS

DSS

BV

∆

T

J

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

J

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain
Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = 250 µA11.63V
Gate Threshold Voltage

Temperature Coefficient
Static Drain-Source

On-Resistance

On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 5 V, ID = 12 A 55 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 3200 pF
Output Capacitance 820 pF
Reverse Transfer Capacitance

(Note 2)

VDD = 15 V, ID = 66 A 400 mJ

VGS = 0 V, ID = 250 µA30 V

ID = 250 µA, Referenced to 25°C25mV/

VDS = 24 V, VGS = 0 V 1

C

°

A

µ

VGS = 20V, VDS = 0 V 100 nA

VGS = -20 V, VDS = 0 V -100 nA

ID = 250 µA, Referenced to 25°C-4mV/

VGS = 10 V, ID = 15 A
V

= 10 V, ID = 15 A,TJ=125°C

GS

V

= 4.5 V, ID =13 A

GS

= 15 V, VGS = 0 V,

V

DS

0.0065

0.0090

0.0085

0.008

0.013

0.010

C

°

Ω

f = 1.0 MHz

400 pF

(Note 2)

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g

gs

gd

Turn-On Delay Time 15 27 ns
Turn-On Rise Time 15 27 ns
Turn-Off Delay Time 85 105 ns
Turn-Off Fall Time
Total Gate Charge 35 50 nC
Gate-Source Charge 9 nC
Gate-Drain Charge

= 15 V, ID = 1 A,

V

DD

= 10 V, R

V

GS

V

= 15 V, ID = 15 A,

DS

= 5 V,

V

GS

GEN

= 6

Ω

Drain-Source Diode Characteristics and Maximum Ratin gs

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.

θJA

R

is guaranteed by design while R

θJC

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Sourc e Diode Fo rward Current 2.3 A
Drain-Source Diode Forward

VGS = 0 V, IS = 2.3 A

(Note 2)

Voltage

is determined by the user's board design.

θCA

b) R

a) R

= 40oC/W when mounted

θJA

on a 1in2 pad of 2oz copper.

= 96oC/W when mounted

θJA

on a minimum pad .

42 68 ns

16 nC

0.72 1.2 V

FDD6670A, Rev. C

T ypical Characteristics

T=-55oC

25oC

FDD6670A

50

40

30

20

10

, DRAIN-SOURCE CURRENT (A)

D

I

0

VGS = 10V

4.5V

3.5V

3.0V

012345

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.6
ID = 15A

VGS = 10V

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

2.2

2

VGS = 3.0V

1.8

1.6

1.4

, NORMALIZED

DS(ON)

1.2

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 1020304050

3.5V

4.0V

I

, DRAIN CURRENT (A)

D

4.5V

6.0V
10V

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

0.025
ID = 8 A

0.02

0.015

0.01

, ON-RESISTANCE (OHM)

0.005

DS(ON)

R

0

246810

V

, GATE TO SOU R CE VOLTAGE ( V)

GS

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation

with Temperature.

60

VDS = 5V

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

11.522.533.54

125oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 6. Body Diode Forward V oltage

Variation with Source Current

and Temperature.

FDD6670A, Rev. C