Fairchild Semiconductor FDD6632 Datasheet

FDD6632

N-Channel Logic Level UltraFET® Trench Power MOSFET 30V, 9A, 90mΩ

FDD6632

June 2002

General Description

This device employs a new advanced trench MOSFET

Features

•Fast switching technology and features low gate charge while maintaining low on-resistance.

Optim ized for swit ch ing appl icat ions , t his devi ce i mpr ove s the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Formerly developmental type 83317

Applications

•r

•Q

•C

= 0.058Ω (Typ), VGS = 10V, ID = 9A

DS(ON)

= 0.090Ω (Typ), VGS = 4.5V, ID = 6A

DS(ON)

(Typ) = 2.6nC, VGS = 5V

g(TOT)

(Typ) = 0.8nC

gd

(Typ) = 255pF

ISS

• DC/DC converters

D

TO-252

D

G

S

= 25°C unless otherwise noted

C

G

S

D-PAK

(TO-252)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 30 V Gate to Source Voltage ±20 V Drain Curr e nt Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 4.5V) 6 A

C

= 25oC, VGS = 10V, R

C

= 52oC/W) 4 A

θJA

9A

Pulsed Figure 4 A

P

D

, T

T

J

STG

Power dissipation 15 W Derate above 25

o

C0.1W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-252 10 Thermal Resistance Junction to Ambient TO-252 100 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad ar ea 52

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD6632 FDD6632 TO-252AA 330mm 16mm 2500 units

o

C/W

o

C/W

o

C/W

FDD6632 Rev. B

FDD6632

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltag e ID = 250µA, VGS = 0V 30 - - V

V

= 25V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

I

= 9A, VGS = 10V - 0.058 0.090

Drain to S ou r c e On Re si st ance

D

= 6A, VGS = 4.5V - 0.090 0.110

I

D

Dynamic Characteristics

C C C Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gd

Input Capacitance Output Capacitance - 73 - pF Reverse Transfer Capacitance - 23 - pF Total Gate Charge at 5V VGS = 0V to 5V Threshold Gate Charge VGS = 0V to 1V - 0.3 0.5 nC Gate to Source Gate Charg e - 0.8 - nC Gate to Drain “Miller” Charge - 0.8 - nC

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 10 - ns Rise Time - 41 - ns Turn-Off D elay Time - 10 - ns Fall Time - 23 - ns Turn-Off Time - - 50 ns

(VGS = 4.5V)

= 15V, VGS = 0V,

V

DS

f = 1MHz

V

= 15V, ID = 6A

DD

V

= 4.5V, RGS = 47Ω

GS

V

DD

I

= 9A

D

I

= 1.0m A

g

= 15V

-255- pF

-2.64.0nC

- - 77 ns

µA

Ω

Switching Characteristics (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 4 - ns Rise Time - 2 - ns Turn-Off D elay Time - 33 - ns Fall Time - 20 - ns Turn-Off Time - - 80 ns

GS

= 10V)

V

= 15V, ID = 6A

DD

V

= 10V, RGS = 47Ω

GS

--9ns

Unclamped Inductive Switching

t

AV

Avalanche Time ID = 2.3A, L = 3.0mH 153 - - µs

Drain-Source Diode Characteristics

I

= 9A - - 1.25 V

V

SD

t

rr

Q

RR

Source to Drain Diode Voltage Reverse Recovery Time ISD = 9A, dISD/dt = 100A/µs--18ns

Reverse Recovered Charge ISD = 9A, dISD/dt = 100A/µs--8nC

SD

I

= 5A - - 1.0 V

SD

FDD6632

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

-4

10

SINGLE PULSE

10

8

6

4

, DRAIN CURRENT (A)

D

I

2

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

V

GS

V

GS

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

0

x R

= 10V

= 4.5V

θJC

t

+ T

1

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

100

VGS = 5V

, PEAK CURRENT (A) I

TRANSCONDUCTANCE

DM

MAY LIMIT CURRENT IN THIS REGION

10

7

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

FDD6632

Typical Characteristics T

20

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

15

10

, DRAIN CURRENT (A)

D

I

5

TJ = 175oC

0

123456

TJ = 25oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

C

Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics

150

125

ID = 6A

100

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

75

DS(ON)

r

50

246810

ID = 9A

V

, GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

20

VGS = 10V

15

10

, DRAIN CURRENT (A)

D

I

5

0

0 0.5 1.0 1.5 2.0 2.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

2.0

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V

VGS = 4.5V

VGS = 3.5V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VGS = 10V, ID = 9A

TC = 25oC

Figure 7. Drain to Source O n Resistance vs Gate

Voltage and Drain Current

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

0.4

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

Figure 9. Normali zed Gate Threshold Voltage vs

Junction Temperatur e

Figure 8. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2 ID = 250µA

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200 T

, JUNCTION TEMPERATURE (oC)

J

Figure 10. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature