Fairchild Semiconductor FDD6612A Datasheet
FDD6612A
N-Channel, Logic Level, PowerT rench MOSFET
FDD6612A
July 2000
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Features
• 30 A, 30 V. R
R
DS(on)
DS(on)
= 0.020 Ω @ V
= 0.028 Ω @ V
• Low gate charge (9nC typical).
= 10 V
GS
= 4.5 V.
GS
• Fast switching speed.
Applications
• DC/DC converter
• High performance trench technology for extremely
low R
DS(on)
.
• Motor drives
D
D
G
G
S
±
9.5
2.8
1.3
30
36
S
20
V
A
W
°
C
TO-252
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 30 V
Gat e-Source Voltage
Drain Current - Continuous
(Note 1a)
Drain Current - Pulsed 60
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
Operatin g and Storage Junction Temperature Rang e -55 to +150
=25oC unless otherwise noted
T
A
TA = 25oC
(Note 1a)
(Note 1b)
(Note 1)
(Note 1)
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
3.5
96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD6612A FDD6612A 13’’ 16mm 2500
2000 Fairchild Semiconductor International
°
C/W
°
C/W
FDD6612A, Rev.C
FDD6612A
GS
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
DSS
BV
∆
T
J
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
J
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
Breakdown Voltage Temperature
ID =250µA,Referenced to 25°C22 mV/
°
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate-Body Leakage Current,
VGS = 20V, VDS = 0 V 100 nA
A
µ
Forward
Gate-Body Leakage Current,
VGS = -20 V, VDS = 0 V -100 nA
Reverse
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = 250 µA11.63V
Gate Threshold Voltage
ID =250µA,Referenced to 25°C-4.2 mV/
°
Temperature Coefficient
Static Drain-Source
On-Resistance
VGS =10 V, ID = 9.5 A
V
=10 V, ID = 9.5A,TJ=125°C
V
=4.5 V, ID = 8 A
GS
0.017
0.026
0.024
0.020
0.036
0.028
Ω
On-State Drain Current VGS =10 V, VDS = 5 V 40 A
Forward Transconductance VDS =5 V, ID = 9.5 A 22 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 830 pF
Output Capacitance 185 pF
Reverse Transfer Capacitance
V
= 15 V, VGS = 0 V,
DS
f = 1.0 MHz
80 pF
C
C
(Note 2)
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time 6 12 ns
Turn-On Rise Time 10 18 ns
Turn-Off Delay Time 18 29 ns
Turn-Off Fall Time
Total Gate Charge 9 13 nC
Gate-Source Charge 2.8 nC
Gate-Drain Charge
V
= 15 V, ID = 1 A,
DD
V
= 10 V, R
GS
V
= 15 V, ID = 9.5 A,
DS
V
= 5 V,
GS
GEN
= 6
Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
θJA
R
is guaranteed by design while R
θJC
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Di ode Forward Current 2.3 A
Drain-Source Diode
VGS = 0 V, IS = 2.3 A
(Note 2)
ForwardVoltage
is determined by the user's board design.
θJA
b) R
a) R
= 45oC/W when mounted
θJA
on a 1in2 pad of 2oz copper.
= 96oC/W when mounted
θJA
on a 0.076 pad of 2oz copper.
512ns
3.1 nC
0.80 1.2 V
FDD6612A, Rev.C
T ypical Characteristics
FDD6612A
60
VGS = 10V
50
40
30
20
10
, DRAIN-SOURCE CURR EN T (A )
D
I
0
012345
4.5V
4.0V
V
, DRAIN-SOURCE VOLTAGE (V)
DS
3.5V
3.0V
Figure 1. On-Region Characteristics.
1.8
ID = 9.5A
V
= 10V
GS
1.6
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (oC)
J
Figure 3. On-Resistance Variation
with Temperature.
2.2
2
VGS = 3.5V
1.8
1.6
1.4
1.2
1
0.8
0 102030405060
4.0V
4.5V
I
5.0V
6.0V
8.0V
, DRAIN CURRENT (A)
D
10V
Figure 2. On-Resistance Variation
with Drain Current and Gate V oltage.
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
246810
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = 125oC
TA = 25oC
ID = 5A
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
40
VDS = 5V
32
24
16
, DRAIN CURRENT (A)
D
I
8
0
123456
V
TA = -55oC
, GATE TO SOURCE VOLTAGE (V)
GS
o
125oC
100
VGS = 0V
10
1
0.1
0.01
0.001
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
, BODY DIODE FORWARD VOLTAGE (V)
V
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward V oltage
Variation with Source Current
and Temperature.
-55oC
FDD6612A, Rev.C
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