Fairchild Semiconductor FDD6030BL Datasheet
FDD6030BL
(
)
N-Channel PowerTrenchTM MOSFET
FDD6030BL
April 1999
ADV ANCE INFORMATION
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the onstate resistance and yet maintain low gate charge for
superior switching performance.
Features
• 35 A, 30 V. R
R
DS(ON)
DS(ON)
• Low gate charge.
= 0.018 Ω @ V
= 0.025 Ω @ V
= 10 V
GS
= 4.5 V.
GS
• Fast switching speed.
Applications
• DC/DC converter
• High performance trench technology for extremely
low R
DS(ON)
.
• Motor drives
D
D
G
G
S
TO-252
T
=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 30 V
Gate-Source Voltage
Maximum Drain Current -Continuous
Maximum Drain Current -Pulsed 100
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
Operating and Storage Junction Temperature Range -55 to +150
C
TA = 25oC
Note 1
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
S
20 V
±
35
9
44
2.8
1.3
A
W
C
°
Thermal Characteristics
R
JC
θ
R
JA
θ
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
2.8
96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD6030BL FDD6030BL 13’’ 16mm 2500
1999 Fairchild Semiconductor Corporation
C/W
°
C/W
°
FDD6030BL Rev. A
FDD6030BL
yp
Electrical Characteristics
TC=25oC unless otherwise noted
Symbol Parameter Test Conditions Min T
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
ON CHARACTERISTICS
V
GS(TH)
R
DS(ON)
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = 250 µA1 3V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 9 A
V
= 4.5 V, ID = 7.5 A
GS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
VGS = 0 V, IS = 2.3 A
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
θJA
R
is guaranteed by design while R
θJC
is determined by the user's board design.
θJA
a) R
= 45oC/W when mounted on a
θJA
1in2 pad of 2oz copper.
1.3 V
b) R
= 96oC/W when mounted on a
θJA
minimum pad.
Max Units
A
µ
0.018
0.025
2.3 A
Ω
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDD6030BL Rev. A
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