Fairchild Semiconductor FDD5680 Datasheet
FDD5680
(
)
N-Channel, PowerT rench MOSFET
FDD5680
July 2000
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Features
• 38 A, 60 V. R
R
DS(on)
DS(on)
= 0.021 Ω @ V
= 0.025 Ω @ V
• Low gate charge (33nC typical).
= 10 V
GS
GS
= 6 V.
• Fast switching speed.
Applications
• DC/DC converter
• High performance trench technology for extremely
low R
DS(on)
.
• Motor drives
D
D
G
G
S
TO-252
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 60 V
Gate-Source Voltage
Maximun Drain Current - Continuous
(Note 1a)
Maximum Drain Current - Pulsed 100
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
Operating and Storage Junction Temperature Range -55 to +150
TA=25oC unless otherwise noted
Note 1
(Note 1)
TA = 25oC
(Note 1a)
(Note 1b)
S
20 V
±
38
8.5
60
2.8
1.3
A
W
C
°
Thermal Characteristics
R
JC
θ
R
JA
θ
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
2.1
96
C/W
°
C/W
°
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD5680 FDD5680 13’’ 16mm 2500
2000 Fairchild Semiconductor International
FDD5680, Rev. C
FDD5680
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
W
DSS
I
AR
BV
DSS
∆
DSS
BV
∆
T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
∆
GS(th)
V
∆
T
J
R
DS(on)
I
D(on)
g
FS
Single Pulse Drain-Source
VDD = 30 V, ID = 38 A 140 mJ
Avalanche Energy
Maximum Drain-Source Avalanche Current 38 A
Drain-Source Breakdown
Voltage
Breakdown Voltage
V
= 0 V, ID = 250 µA
GS
I
= 250µA, Referenced to 25°C
60 V
60
mV/°C
Temperature Coefficient
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1
Gate-Body Leakage Current,
VGS = 20V, VDS = 0 V 100 nA
Forward
Gate-Body Leakage Current,
VGS = -20 V, VDS = 0 V -100 nA
Reverse
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
= VGS, ID = 250 µA
V
DS
I
= 250 µA,Referenced to 25°C
22.44 V
-6.4
mV/°C
Temperature Coefficient
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 8.5 A
= 10 V, I
V
V
= 6 V, ID = 7.5 A
GS
= 8.5 A,T
=125°C
0.017
0.028
0.019
0.021
0.042
0.025
On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 5 V, ID = 8.5 A 30 S
µ
A
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1835 pF
Output Capacitance 210 pF
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time 15 27 ns
Turn-On Rise Time 9 18 ns
Turn-Off Delay Time 35 56 ns
Turn-Off Fall Time
Total Gate Charge 33 46 nC
Gate-Source Charge 6.5 nC
Gate-Drain Charge
(Note 2)
V
= 30 V, VGS = 0 V,
DS
f = 1.0 MHz
= 30 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
V
= 30 V, ID = 8.5 A,
DS
V
= 10 V,
GS
GEN
= 6
Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
R
θJA
θJC
Maximum Continuous Drain-Source Diode Forward Current 2.3 A
Drain-Source Diode Forward
VGS = 0 V, IS = 2.3 A
(Note 2)
Voltage
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
is guaranteed by design while R
is determined by the user's board design.
θJA
a) R
= 45oC/W when mounted
θJA
on a 1in2 pad of 2oz copper.
b) R
= 96oC/W when mounted
θJA
on a 0.076 pad of 2oz copper.
90 pF
16 26 ns
7.5 nC
0.75 1.2 V
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDD5680, Rev. C
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