Fairchild Semiconductor FDD5670 Datasheet
FDD5670
60V N-Channel PowerTrenchTM MOSFET
FDD5670
March 1999
ADV ANCE INFORMATION
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications.
DS(ON)
Features
• 48 A, 60 V. R
R
DS(ON)
DS(ON)
= 0.015 Ω @ V
= 0.018 Ω @ V
= 10 V
GS
= 6 V.
GS
• Low gate charge.
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON
.
)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
D
D
G
G
S
TO-252
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 60 V
Gat e-Source Voltage
Maximum Drain Current -Continuous
Maximum Drain Current -Pulsed 100
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
Operatin g and Storage Junction Temperature Range -55 to +150
T
=25oC unless otherwise noted
C
TA = 25oC
(Note 1a)
(Note 1b)
(Note 1)
(Note 1a)
(Note 1)
S
±20
48
10
70
2.8
1.3
V
A
W
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
1.8
96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape widt h Quantity
FDD5670 FDD5670 13’’ 16mm 2500
1999 Fairchild Semiconductor Corporation
°C/W
°C/W
FDD5670 Rev. A
FDD5670
Electrical Characteristics
TC=25oC unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
ON CHARACTERISTICS
V
GS(TH)
R
DS(ON)
Drain-Source Breakdown Vol t age
V
= 0 V, ID = 250 µA
GS
60 V
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1
Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
(Note 2)
Gate Thre shold Voltage
Static Drain-Source
On-Resistance
V
= VGS, ID = 250 µA
DS
VGS = 10 V, ID = 10 A
V
= 6 V, ID = 9 A
GS
24V
0.015
0.018
DRAIN-SO URCE DIODE CHARACTERISTICS AND MA XIM UM RA TINGS
I
S
V
SD
Notes:
1. R
R
θJC
θJA
Maximum Continuous Drain-Source Diode Forward Current 48 A
Drain-Source Diode Forward
VGS = 0 V, IS = 2.4 A 1.2 V
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
is guaranteed by design while R
is determined by the user's board design.
θCA
a) R
= 45oC/W when mounted on
θJA
a 1 in2 pad of 2oz copper.
b) R
= 96oC/W when mounted on
θJA
a 0.076 in2 pad of 2oz copper.
A
µ
Ω
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDD5670 Rev. A