Fairchild Semiconductor FDD5614P Datasheet
FDD5614P
60V P-Channel PowerTrench
MOSFET
FDD5614P
February 2001
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized
for power management applications.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• –15 A, –60 V. R
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
= 100 mΩ @ VGS = –10 V
DS(ON)
= 130 mΩ @ VGS = –4.5 V
R
DS(ON)
S
D
G
G
S
TO-252
D
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage –60 V
Gate-Source Voltage
Drain Current – Continuous (Note 3)
– Pulsed (Note 1a)
Power Dissipation for Single Operation (Note 1) 42
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
±20
–15
–45
3.8
1.6
–55 to +175
V
A
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case (Note 1) 3.5
Thermal Resistance, Junction-to-Ambient (Note 1a) 40
Thermal Resistance, Junction-to-Ambient (Note 1b) 96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD5614P FDD5614P 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation
°C/W
°C/W
°C/W
FDD5614P Rev C(W)
FDD5614P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W
DSS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = –30 V, ID = –4.5 A 90 mJ
–4.5 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = –250 µA
V
GS
I
= –250 µA, Referenced to 25°C
D
Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
–60 V
–49
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = –250 µA
V
DS
= –250 µA, Referenced to 25°C
I
D
VGS = –10 V, ID = –4.5 A
= –4.5 V, ID = –3.9 A
V
GS
= –10 V,ID = –4.5 A,TJ=125°C
V
GS
On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
Forward Transconductance VDS = –5 V, ID = –3 A 8 S
–1 –1.6 –3 V
4
76
99
137
100
130
185
mV/°C
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 759 pF
Output Capacitance 90 pF
Reverse Transfer Capacitance
= –30 V, V
V
DS
f = 1.0 MHz
GS
= 0 V,
39 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 7 14 ns
Turn–On Rise Time 10 20 ns
= –30 V, ID = –1 A,
V
DD
= –10 V, R
V
GS
GEN
= 6 Ω
Turn–Off Delay Time 19 34 ns
Turn–Off Fall Time
Total Gate Charge 15 24 nC
Gate–Source Charge 2.5 nC
V
= –30V, ID = –4.5 A,
DS
= –10 V
V
GS
Gate–Drain Charge
12 22 ns
3.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current –3.2 A
Drain–Source Diode Forward
VGS = 0 V, IS = –3.2 A (Note 2) –0.8 –1.2 V
Voltage
FDD5614P Rev C(W)
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