Fairchild Semiconductor FDD5612 Datasheet
FDD5612
60V N-Channel PowerTrenchTM MOSFET
FDD5612
July 1999
ADVANCE INFORMATION
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
Features
19 A, 60 V. R
= 0.055 Ω @ V
DS(ON)
R
= 0.064 Ω @ V
DS(ON)
= 10 V
GS
= 6 V.
GS
Optimized for use in high frequency DC/DC converters.
This MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R
specifications. The result is a MOSFET that is easier to
DS(ON)
drive, even at very high frequencies, and DC/DC power
Low gate charge.
Very fast switching.
supply designs with higher overall efficiency.
Applications
DC/DC converter
Motor drives
D
D
G
G
S
±
3.2
1.3
S
20
19
6
36
TO-252
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 60 V
Gate-Source Voltage
Maximum Drain Cu rren t -Con tinuo u s
Maximum Drain Current -Pulsed 100
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
Operating and Storage Junction Temperature Range -55 to +150
=25oC unless otherwise noted
C
(Note 1)
(Note 1a)
(Note 1)
TA = 25oC
(Note 1 a )
(Note 1 b )
V
A
W
°
C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (Note 1a)
(No te 1b)
(Note 1)
3.5
40
96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDD5612 FDD5612 13” 16mm 2500
1999 Fairchild Semiconductor Corporation
°
C/W
°
C/W
FDD5612 Rev. A
FDD5612
Electrical Characteristics T
=25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain-Source Breakdown Voltage
= 0 V, ID = 250 µA
V
GS
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1
Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
60 V
On Characteristics (Note 2)
V
GS(TH)
R
DS(ON)
Gate Threshold Voltage
Static Drain-Sourc e
On-Resistance
= VGS, ID = 250 µA
V
DS
VGS = 10 V, ID = 6 A
V
= 6 V, ID = 5.6 A
GS
13V
0.055
0.064
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
Notes:
1. R
R
θJC
SD
θJA
Maximum Continuous Drain-S ource Diode Forward Current (Note 1) 19 A
Drain-Source Diode Forward
VGS = 0 V, IS = 2.7 A (Note 2) 1.2 V
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
is guaranteed by design while R
is determined by the user's board design. R
θCA
a) R
= 40oC/W when mounted on a
θJA
1 in2 pad of 2oz copper.
has been used to determine some of the maximum ratings.
θJC
b) R
= 96oC/W when mounted on
θJA
a 0.076 in2 pad of 2oz copper.
µA
Ω
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDD5612 Rev. A