Fairchild Semiconductor FDU3706, FDD3706 Datasheet
April 2002
FDD3706/FDU3706
FDD3706/FDU3706
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low R
in a small package.
DS(ON)
Applications
• DC/DC converter
• Motor Drives
Features
• 50 A, 20 V R
R
R
• Low gate charge (16 nC)
• Fast Switching
• High performance trench technology for extremely
low R
DS(ON)
= 9 mΩ @ VGS = 10 V
DS(ON)
= 11 mΩ @ VGS = 4.5 V
DS(ON)
= 16 mΩ @ VGS = 2.5 V
DS(ON)
D
G
D-PAK
TO-252
(TO-252)
I-PAK
(TO-251AA)
G D S
G
S
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 20 V
DSS
V
Gate-Source Voltage ± 12 V
GSS
ID Continuous Drain Current @TC=25°C (Note 3) 50 A
@TA=25°C (Note 1a) 14.7
Pulsed (Note 1a) 60
PD
TJ, T
STG
Power Dissipation @TC=25°C (Note 3) 44
@TA=25°C (Note 1a) 3.8
@TA=25°C (Note 1b) 1.6
Operating and Storage Junction Temperature Range -55 to +175 °C
W
Thermal Characteristics
R
Thermal Resistance, Junction-to-Case (Note 1) 3.4 °C/W
θJC
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W
θJA
R
Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD3706 FDD3706 D-PAK (TO-252) 13’’ 12mm 2500 units
FDU3706 FDU3706 I-PAK (TO-251) Tube N/A 75
2002 Fairchild Semiconductor Corp.
FDD3706/FDU3706 Rev C (W)
FDD3706/FDU3706
Electrical Characteristics T
Symbol
Drain-Source Avalanche Ratings (Note 2)
Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
A
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 10V, ID=7A 60 mJ
IAS Drain-Source Avalanche Current 7 A
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V
DSS
∆BVDSS
∆TJ
I
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
ID = 250 µA,Referenced to 25°C
13
mV/°C
Coefficient
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.5 1 1.5 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 16.2 A
VGS = 4.5 V, ID = 14.7 A
VGS = 2.5 V, ID = 12.2 A
VGS = 4.5 V, ID = 14.7 A,TJ = 125°C
I
On–State Drain Current VGS = 4.5 V, VDS = 5 V 30 A
D(on)
–3.5
7.5
8
11
11
12.6
16
19
9
mV/°C
mΩ
gFS Forward Transconductance VDS = 5 V, ID = 14.7 A 65 S
Dynamic Characteristics
C
Input Capacitance 1882 pF
iss
C
Output Capacitance 430 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = 10 V, V
f = 1.0 MHz
= 0 V,
GS
201 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 11 20 ns
d(on)
tr Turn–On Rise Time 15 27 ns
t
Turn–Off Delay Time 35 56 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 16 23 nC
Qgs Gate–Source Charge 3.7 nC
Qgd Gate–Drain Charge
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
VDS = 10V, ID = 14.7 A,
VGS = 4.5 V
16 29 ns
4 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 3.2 A
VSD Drain–Source Diode Forward Voltage
Notes:
1. R
θJA
the drain pins. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
VGS = 0 V, IS = 3.2 A (Note 2)
0.7 1.2 V
a) R
= 40°C/W when mounted on a
θJA
1in2 pad of 2 oz copper
b) R
= 96°C/W when mounted
θJA
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and R
P
D
R
DS(ON)
is at T
DS(on)
and VGS = 10V. Package current limitation is 21A
J(max)
FDD3706/FDU3706 Rev C (W)
Loading...