Fairchild Semiconductor FDD3690 Datasheet
FDD3690
100V N-Channel PowerTrench
MOSFET
FDD3690
April 2001
General Description
This N-Channel MOSFET has been designed
specifically to i mprove the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM c ontrollers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
specifications.
R
DS(ON)
The result is a MOSF ET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 22 A, 100 V. R
R
• Low gate charge (28nC typical)
• Fast Switching
• High performance trench te chnology for extremely
low R
• High power and current handling capability
DS(ON)
= 64 mΩ @ VGS = 10 V
DS(ON)
= 71 mΩ @ VGS = 6 V
DS(ON)
D
D
G
S
D-PAK
TO-252
(TO-252)
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 100 V
DSS
V
Gate-Source Voltage
GSS
ID Continuous Drain Current @TC=25°C (Note 3) 22 A
Pulsed (Note 1a) 75
PD
TJ, T
STG
Power Dissipation @TC=25°C (Note 3) 60
@TA=25°C (Note 1a) 3.8
@T
Operating and Storage Junction Temperature Range –55 to +175
=25°C (Note 1b) 1.6
A
±20
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1) 2.5
(Note 1a) 40
(Note 1b) 96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD3690 FDD3690 13’’ 16mm 2500 units
2001 Fairchild Semiconductor Corp.
°C/W
°C/W
°C/W
FDD3690 Rev C(W)
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Single Pulse Drain-Source
DSS
VDD = 50 V, ID = 5.4 A 175 mJ
Avalanche Energy
IAR Maximum Drain-Source Avalanche
5.4 A
Current
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
100 V
78
mV/°C
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
I
On-State Drain Current VGS = 10 V, VDS = 5 V 20 A
D(on)
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 10 V, ID = 5.4 A
= 6 V, ID = 5.2 A
V
GS
= 10 V, ID = 5.4 A, TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 5 V, ID = 5.4 A 20 S
2 2.4 4 V
–6.2
44
47
88
mV/°C
64
71
135
FDD3690
µA
mΩ
Dynamic Characteristics
V
C
Input Capacitance 1514 pF
iss
C
Output Capacitance 82 pF
oss
C
Reverse Transfer Capacitance
rss
= 50 V, V
DS
f = 1.0 MHz
= 0 V,
GS
44 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 11 20 ns
d(on)
tr Turn–On Rise Time 6.5 15 ns
t
Turn–Off Delay Time 29 60 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 28 39 nC
Qgs Gate–Source Charge 6.2 nC
Qgd Gate–Drain Charge
= 50 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
= 50 V, ID = 5.4 A,
V
DS
V
= 10 V
GS
GEN
= 6 Ω
10 20 ns
5.4 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Di ode Forward Current 3.2 A
VSD Drain–Source Diode Forward Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where P
D
is guaranteed by design while R
θJC
P
R
is maximum power dissipation at TC = 25°C and R
is determined by the user's board design.
θCA
= 40°C/W when mounted on a
a) R
θJA
2
1in
pad of 2 oz copper
D
DS(ON)
DS(on)
V
= 0 V, IS = 3.2 A (Note 2)
GS
is at T
and VGS = 10V. Package current limitation is 21A
J(max)
0.73 1.2 V
b) R
= 96°C/W when mounted
θJA
on a minimum pad.
FDD3690 Rev. C(W)
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