Fairchild Semiconductor FDD3672 Datasheet

FDD3672

N-Channel UltraFET® Trench MOSFET
100V, 44A, 28mΩ

FDD3672

June 2002

Features

•r

•Q

• Low Miller Charge

= 24mΩ (Typ.), V

DS(ON)

(tot) = 24nC (Typ.), V

g

= 10V, ID = 44A

GS

= 10V

GS

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• PrimarySwitch for 24V and 48V Systems

• Low Qrr Body Diode

• Optimized eff iciency at high frequ encies

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

• High Voltage Synchronous R ectifier

• Direct Injection / Diesel Injection System

• 42V Automotive Load Control

• Electronic Valve Train System

Formerly developmental type 82760

GATE

SOURCE

DRAIN

(FLANGE)

G

D

TO-252AB

FDDSERIES

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Curr e nt
Continuous (T

I

D

Continuous (T
Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 31 A

C

= 25oC, VGS = 10V, R

amb

= 52oC/W) 6.5 A

θJA

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 120 mJ
Power dissipation 135 W
Derate above 25

o

C0.9W/

Operating and Storage Temperature -55 to 175

S

44 A

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product ha s been des igned to me et the e xtr eme test c ondit ions and envir onment deman ded by the automot ive indus t ry. For a

All Fairchild Semiconductor prod ucts are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

©2002 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case TO-252 1.11
Thermal Resistance Junction to Ambient TO-252 100
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad ar ea 52

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

FDD3672 Rev. A

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD3672 FDD3672 TO-252AA 330mm 16mm 2500 units

FDD3672

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain t o Source Breakdown Volta ge ID = 250µA, VGS = 0V 100 - - V

V

= 80V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC= 150oC- - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

Drain to Source On Resistance

= 44A, V

D

= 21A, VGS = 6V, - 0.031 0.047

D

I

=44A, VGS=10V, TC=175oC - 0.054 0.068

D

= 10V - 0.024 0.028

GS

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 247 - pF
Reverse Transfer Capacitance - 62 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total G ate Ch arg e at 10 V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 3 4.5 nC
Gate to Source Gate Charge - 8.6 - nC
Gate Charge Threshold to Plateau - 5.6 - nC

V

DD

I

= 44A

D

I

= 1.0m A

g

= 50V

Gate to Drain “Miller” Charge - 5.6 - nC

-1710- pF

-2436nC

µA

ΩI

Resistive Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 11 - ns
Rise Time - 59 - ns
T u rn-Off Delay Time - 26 - ns
Fall Time - 44 - ns
Turn-Off Time - - 104 ns

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Notes:
1: Starting T
2: Pulse Width = 100s

Source to Drain Di ode Voltage
Reverse Recovery Time ISD = 44A, dISD/dt =100A/µs- - 52ns

Reverse Recovery Charge ISD = 44A, dISD/dt =100A/µs- - 80nC

= 25°C, L = 0.6mH, IAS = 20A.

J

(VGS = 10V)

V

DD

V

GS

I

SD

I

SD

--104ns

= 50V, ID = 44A
= 10V, RGS = 11.0Ω

= 44A - - 1 .25 V

= 21A - - 1.0 V

©2002 Fairchild Semiconductor Corporation FDD3672 Rev. A

FDD3672

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

150

50

V

= 10V

GS

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Continuous Drain Curr ent vs

Case Temperature

, NORMALIZED
Z

, PEAK CURRENT (A)
I

θJC

DM

THERMAL IMPEDANCE

500

100

30

0.1

0.01

10

-5

10

VGS = 10V

-5

SINGLE PULSE

-4

10

-3

10

-2

10

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-4

10

-3

10

t, PULSE WIDTH (s)

-2

10

-1

10

TC = 25oC

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

P

DM

1/t2

x R

θJC

0

10

o

25

0

10

t

1

t

2

+ T

θJC

C

C DERATE PEAK

175 - T

C

150

1

10

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation FDD3672 Rev. A

Typical Characteristics T

= 25°C unless otherwise noted

C

FDD3672

300

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

100

10

, AVALANCHE CURRENT (A)

AS

I

STARTING TJ = 150oC

1

0.001 0.01 0.1 1
tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 5. Unclamped Inductive Switching

Capability

80

TC = 25oC

60

40

, DRAIN CURRENT (A)

20

D

I

0

0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 10V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 5V

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 7V

VGS = 6V

80

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V

= 15V

DD

60

40

TJ = 25oC

20

, DRAIN CURRENT (A)

D

I

0

10

3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 175oC

TJ = -55oC

Figure 6. Transfer Characteristics

40

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

35

30

25

20

15

DRAIN TO SOURCE ON RESISTANCE (m Ω)

0 1020304050

VGS = 6V

VGS = 10V

I

, DRAIN CURRENT (A)

D

Figure 7. Saturation Characte risti cs Figure 8. Drain to Sou rce On Resistanc e vs Dr ain

Current

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 44A

Figure 9. Normalized Drain to Source On

Resistance vs Junction Temperature

©2002 Fairchild Semiconductor Corporation FDD3672 Rev. A

1.2
VGS = VDS, ID = 250µA

1.0

0.8

NORMALIZED GATE

0.6

THRESHOLD VOLTAGE

0.4

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

Figure 10. Normalized Gat e Threshol d Voltage vs

Junction Temperatur e