Fairchild Semiconductor FDD3580 Datasheet
August 2001
2001 Fairchild Semiconductor Corporation
FDD3580/FDU3580 Rev A1(W)
FDD3580/FDU3580
80V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
This MOSFET features faster switching and lower gate
change than other MOSFETs with comparable R
DS(ON)
specifications resulting in DC/DC power supply desi gns
with higher overall efficiency.
Features
• 7.7 A, 80 V. R
DS(ON)
= 29 mΩ @ VGS = 10 V
R
DS(ON)
= 33 mΩ @ VGS = 6 V
• Low gate charge (34nC typical)
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
S
D
G
Absolute Maximum Ratings T
A
=25oC unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 80 V
V
GSS
Gate-Source Voltage
± 20
V
Maximum Drain Current-Continuous (Note 1a) 7.7I
D
Maximum Drain Current – Pulsed 50
A
Maximum Power Dissipation @TC = 25oC (Note 1) 42
TA = 25oC (Note 1a) 3.8
P
D
TA = 25oC (Note 1b) 1.6
W
TJ, T
STG
Operating and Storage Junction Temperature Range
−55 to +175 °C
Thermal Characteristics
R
θJC
Thermal Resistance, Junction-to- Case (Note 1) 3.5
°C/W
R
θJA
Thermal Resistance, Junction-to- Ambient (Note 1b) 96
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD3580 FDD3580 13’’ 16mm 2500
FDU3580 FDU3580 Tube N/A 75
FDD3580
/
FDU3580
G DS
I-PAK
(TO-251AA)
G
S
D
TO-252
D-PAK
(TO-
G
S
D
TO-252
D-PAK
(TO-252)
FDD3580/FDU3580 Rev. A1(W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 40 V, ID = 7.7 A 245 mJ
I
AR
Maximum Drain-Source
Avalanche Current
7.7 A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, ID = 250 µA
80 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
79
mV/°C
I
DSS
Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1
µA
I
GSSF
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS,ID = 250 µA
22.54 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C −7mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
VGS = 10 V, ID = 7.7 A
V
GS
= 6 V, ID = 7.2 A
V
GS
= 10 V, ID = 7.7 A,TJ=125°C
23
24
37
29
33
50
mΩ
I
D(on)
On–State Drain Current VGS = 10 V, VDS = 10 V 30 A
g
FS
Forward Transconductance VDS = 10 V, ID = 7.7 A 28 S
Dynamic Characteristics
C
iss
Input Capacitance 1760 pF
C
oss
Output Capacitance 144 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 40 V, V
GS
= 0 V,
f = 1.0 MHz
72 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 13 23 ns
t
r
Turn–On Rise Time 8 16 ns
t
d(off)
Turn–Off Delay Time 34 54 ns
t
f
Turn–Off Fall Time
V
DD
= 40 V, ID = 1 A,
V
GS
= 10 V, R
GEN
= 6 Ω
16 29 ns
Q
g
Total Gate Charge 35 49 nC
Q
gs
Gate–Source Charge 6.2 nC
Q
gd
Gate–Drain Charge
V
DS
= 40V, ID = 7.7 A,
V
GS
= 10 V,
8.6 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 3.2 A
V
SD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.2 A (Note 2) 0.73 1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
= 40 °C/W when mounted on a
1in2 pad of 2 oz copper.
Scale 1 : 1 on letter size paper
b) R
θJA
= 96 °C/W when mounted
on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDD3580
/
FDU3580
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