Fairchild Semiconductor FDD3570 Datasheet

FDD3570

80V N-Channel PowerTrench MOSFET

FDD3570

February 2000

PRELIMINARY

General Description

This N-Channel Logic level MOSFET has been
designed specifically to improve the overall effici ency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.

Features

10 A, 80 V. R

•

R

Fast switching speed.

•

= 0.019 Ω @ VGS = 10 V

DS(ON)

= 0.022 Ω @ VGS = 6 V.

DS(ON)

This MOSFET features faster switching and lower gate
change than other MOSFETs with comparable R
specifications resulting in DC/DC power supply des igns
with higher overall efficiency.

DS(ON)

High performance trench technology for extremely

•

DS(ON)

.

low R

High power and current handling capability.

•

D

D

G

S

G

TO-252

S

Absolute Maximum Ratings

TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 80 V
Gate-Source Voltage
Maximum Drain Current-Continuous

(Note 1)
(Note 1a)

20

±

43

10
Maximum Drain Current – Pulsed 110
Maximum Power Dissipation @TC = 25oC

TA = 25oC
TA = 25oC

(Note 1)
(Note 1a)
(Note 1b)

69

3.4

1.3

Operating and Storage Junction Temperature Range -55 to +150

W

°

V
A

C

Thermal Characteristics

R

JC

θ

R

JA

θ

Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient

(Note 1)
(Note 1a)
(Note 1b)

1.8
37
96

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD3570 FDD3570 13’’ 16mm 2500

2000 Fairchild Semiconductor Corpor ation



C/W

°

C/W

°

C/W

°

FDD3570 Rev BW)

FDD3570

Electrical Characteristics

TA = 25°C unless otherwise noted16

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

DSS

BV

∆

T

∆

J

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

J

R

DS(on)

I

D(on)

g

FS

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

V

= 0 V, ID = 250 µA

GS

I

= 250 µA,Referenced to 25°C

D

Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1
Gate–Body Leakage Current,

VGS = 20 V, VDS = 0 V 100 nA

80 V

78

mV/°C

µ

Forward
Gate–Body Leakage Current,

VGS = –20 V VDS = 0 V –100 nA

Reverse

(Note 2)

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain–Source

On–Resistance

V

= VGS, ID = 250 µA

DS

= 250 µA,Referenced to 25°C

I

D

VGS = 10 V, ID = 10 A

= 10 V, ID = 10 A,TJ =125°C

V

GS

V

= 6 V, ID = 9 A

GS

22.44 V

-7

0.015

0.027

0.016

0.019

0.038

0.022

mV/°C

On–State Drain Current VGS = 10 V, VDS = 5 V 25 A
Forward Transconductance VDS = 5 V, ID = 14 A 40 S

A

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 2800 pF
Output Capacitance 230 pF
Reverse Transfer Capacitance

= 40 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

117 pF

Switching Characteristics

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 20 32 ns
Turn–On Rise Time 12 24 ns
Turn–Off Delay Time 60 95 ns
Turn–Off Fall Time
Total Gate Charge 54 76 nC
Gate–Source Charge 9.6 nC
Gate–Drain Charge

(Note 2)

V

= 40 V, ID = 1 A,

DD

= 10 V, R

V

GS

= 40V, ID = 9 A,

V

DS

= 10 V

V

GS

GEN

= 6

Ω

24 38 ns

14 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

R

1.

JA

θ

the drain pins. R

Scale 1 : 1 on letter size paper

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2.

Maximum Continuous Drain–Source Diode Forward Current 2.8 A
Drain–Source Diode Forward

VGS = 0 V, IS = 2.8 A

(Note 2)

0.72 1.2 V

Voltage

is guaranteed by design while R

JC

θ

is determined by the user's board design.

CA

θ

a) R

= 40°/W when mounted on a

JA

θ

1in2 pad of 2 oz copper

b) R

= 96°/W when mounted on

JA

θ

a minimum pad.

FDD3570 Rev. A(W)

Typical Characteristics

V

FDD3570

50

VGS = 10V

6.0V

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

0123

5.0V

4.5V

4.0

3.5V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

2

1.8

1.6

VGS = 4.0V

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 1020304050

4.5V

5.0V

6.0V

, DRAIN CURRENT (A)

I

D

7.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2

ID = 9A

1.8
= 10V

V

GS

1.6

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.04

0.03

0.02

, ON-RESISTANCE (OHM)

0.01

DS(ON)

R

0

246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = 125oC

TA = 25oC

10V

ID = 10 A

Figure 3. On-Resistance Variation with

Temperature.

50

VDS = 5V

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

23456

125oC

25oC

TA = -55oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD3570 Rev. A(W)