Fairchild Semiconductor FDD16AN08A0 Datasheet

FDD16AN08A0

N-Channel UltraFET® Trench MOSFET
75V, 50A, 16mΩ

FDD16AN08A0

May 2002

Features

•r

•Q

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82660

= 13mΩ (Typ.), V

DS(ON)

(tot) = 31nC (Typ.), V

g

GATE

SOURCE

= 10V, ID = 50A

GS

= 10V

GS

DRAIN (FLANGE)

TO-252AA

FDD SERIES

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Applications

• 42V Automotiv e Load Control

• Starter / Alternator Systems

• Electronic Power Steeri ng Systems

• Electronic Valve Train Systems

• DC-DC converters and Off-line UPS

• Distributed P ower Architectures and VRMs

• Primary Switch for 24V and 48V systems

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 75 V
Gate to Source Voltage ±20 V
Drain Cur re nt

I

D

Continuous (T
Continuous (T

< 79oC, VGS = 10V)

C

= 25oC, VGS = 10V, with R

amb

= 52oC/W) 9 A

θJA

50 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 95 mJ
Power dissipation 135 W
Derate above 25

o

C0.9W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Charact eristi cs

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality

©2002 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case TO-252 1.11
Thermal Resistance Junction to Ambient TO-252 100
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad ar ea 52

industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

systems certification.

FDD16AN08A0 Rev. A1

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD16AN08A0 FDD16AN08A0 TO-252AA 330mm 16mm 2500 units

FDD16AN08A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltage ID = 250µA, VGS = 0V 75 - - V

V

= 60V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

= 50A, VGS = 10V - 0.013 0.016

D

I

= 25A, VGS = 6V - 0.019 0.029

Drain to S ou r c e On Re si st ance

D

I

= 50A, VGS = 10V,

D

T

= 175oC

J

- 0.032 0.037

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitanc e - 290 - pF
Reverse Transfer Capacitance - 91 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 4 6 nC
Gate to Source Gate Charg e - 9.7 - nC
Gate Charge Threshold to Plateau - 5.7 - nC

V

DD

I

= 50A

D

I

= 1.0m A

g

= 40V

Gate to Drain “Miller” Charge - 7.2 - nC

- 1874 - pF

31 47 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 8 - ns
Rise Time - 54 - ns
Turn-Off Delay Time - 32 - ns
Fall Time - 22 - ns
Turn-Off Time - - 81 ns

(VGS = 10V)

= 40V, ID = 50A

V

DD

V

= 10V, RGS = 10Ω

GS

- - 93 ns

Drain-Source Diode Characteristics

I

= 50A - - 1.2 5 V

V

SD

t

rr

Q

RR

Notes:
1: Starting T

©2002 Fairchild Semiconductor Corporation FDD16AN08A0 Rev. A1

Source to Drain Diode V oltage
Reverse Recovery Time ISD = 50A, dISD/dt = 100A/µs- -34ns

Reverse Recovered Charge ISD = 50A, dISD/dt = 100A/µs- -31nC

= 25°C, L = 155µH, IAS = 35A.

J

SD

= 25A - - 1.0 V

I

SD

FDD16AN08A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

10

80

60

40

, DRAIN CURRENT (A)

D

I

20

0

150

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED
BY PACKAGE

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

0

x R

θJC

t

+ T

1

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

10

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC
FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation FDD16AN08A0 Rev. A1

FDD16AN08A0

Typical Characteristics T

500

100

10

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

, DRAIN CURRENT (A)

D

1

I

SINGLE PULSE
TJ = MAX RATED

T

C

0.1
1 10 100

DS(ON)

= 25oC

VDS, DRAIN TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

C

10µs

100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V

= 15V

DD

75

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 100

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R

≠

0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

ST ARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

ST ARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

100

VGS = 20V VGS = 10V

75

VGS = 7V

VGS = 6V

50

TJ = 25oC

, DRAIN CURRENT (A)

D

I

25

0

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0

TJ = 175oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Charact eristics Figure 8. Saturation Characteristics

0.022

0.020

0.018

0.016

0.014

0.012

DRAIN TO SOURCE ON RESISTANCE(mΩ)

0.01
0 1020 304050

VGS = 6V

VGS = 10V

I

, DRAIN CURRENT (A)

D

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

50

, DRAIN CURRENT (A)

D

I

25

PULSE DURATION = 80µs

0

01234

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200

DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V

TC = 25oC

VGS = 10V, ID =50A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

©2002 Fairchild Semiconductor Corporation FDD16AN08A0 Rev. A1