Fairchild Semiconductor FDD10AN06A0 Datasheet

FDD10AN06A0

N-Channel PowerTrench® MOSFET
60V, 50A, 10.5mΩ

FDD10AN06A0

August 2002

Features

•r

•Q

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82560

MOSFET Maximum Ratings T

= 9.4mΩ (Typ.), V

DS(ON)

(tot) = 28nC (Typ.), V

g

GATE

SOURCE

TO-252AA

FDD SERIES

= 10V, ID = 50A

GS

= 10V

GS

(FLANGE)

DRAIN

= 25°C unless otherwise not ed

C

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Syste m s

• DC-DC converter s and Off-line UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 12V and 24V systems

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 60 V
Gate to Source Voltage ±20 V
Drain Curr e nt

I

D

Continuous (T
Continuous (T

< 115oC, VGS = 10V)

C

= 25oC, VGS = 10V, with R

amb

= 52oC/W) 11 A

θJA

50 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 429 mJ
Power dissipation 135 W
Derate above 25

o

C0.9W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions an d environment dem anded by the au tomotive industry. For a

All Fairchild Semiconductor products are manufactu red, assembled and tested under ISO9000 and QS9000 quality systems

©2002 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case TO-252 1.11
Thermal Resistance Junction to Ambient TO-252 100
Thermal Resistance Junction to Ambient TO-252, 1 in2 copper pad area 52

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be fou nd a t: http://ww w.f airc hilds e m i.co m /pr oduc ts/dis c rete/reliab ility/ind ex.html.

certification.

FDD10AN06A0 Rev. A

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD10AN 06A0 FDD10AN06A0 TO-252AA 330m m 16mm 2500 units

FDD10AN06A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltage ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

= 50A, VGS = 10V - 0.0094 0.0105

D

I

= 25A, VGS = 6V - 0.015 0.027

Drain to S ou r c e On Re si st ance

D

I

= 50A, VGS = 10V,

D

T

= 175oC

J

- 0.020 0.023

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 340 - pF
Reverse Transfer Capacitance - 110 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 3.5 4.6 nC
Gate to Source Gate Charg e - 9.8 - nC
Gate Charge Threshold to Plateau - 6.4 - nC

V

DD

I

= 50A

D

I

= 1.0m A

g

= 30V

Gate to Drain “Miller” Charge - 7.8 - nC

- 1840 - pF

28 37 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 8 - ns
Rise Time - 79 - ns
Turn-Off D elay Time - 32 - ns
Fall Time - 32 - ns
Turn-Off Time - - 97 ns

(VGS = 10V)

= 30V, ID = 50A

V

DD

V

= 10V, RGS = 10Ω

GS

--131ns

Drain-Source Diode Characteristics

I

= 50A - - 1.2 5 V

V

SD

t

rr

Q

RR

Notes:
1: Starting T

©2002 Fairchild Semiconductor Corporation FDD10AN06A0 Rev. A

Source to Drain Diode V oltage
Reverse Recovery Time ISD = 50A, dISD/dt = 100A/µs- -27ns

Reverse Recovered Charge ISD = 50A, dISD/dt = 100A/µs- -23nC

= 25°C, L = 8.58mH, IAS = 10A.

J

SD

= 25A - - 1.0 V

I

SD

FDD10AN06A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

10

80

60

40

, DRAIN CURRENT (A)

D

I

20

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED
BY PACKAGE

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

x R

0

θJC

t

1

+ T

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 10V

, PEAK CURRENT (A)

100

DM

I

40

-5

10

-4

10

-3

10

-2

10

-1

10

t, PUL SE WIDTH (s)

TC = 25oC
FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation FDD10AN06A0 Rev. A

Typical Characteristics T

= 25°C unless otherwise noted

C

FDD10AN06A0

500

100

OPERATIO N IN THIS

10

, DRAIN CURRENT (A)

D

I

0.1

AREA MAY BE

LIMITED BY r

1

SINGLE PULSE
TJ = MAX RATED

= 25oC

T

C

110100

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

10µs
100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

500

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V

= 15V

DD

75

50

TJ = 25oC

, DRAIN CURRENT (A)

D

I

25

TJ = 175oC

0

34567

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

100

75

50

, DRAIN CURRENT (A)

D

I

25

0

0 0.5 1.0 1.5 2.0

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

ST ARTING TJ = 150oC

0.1 1 10

tAV, TIME IN AVALANCHE (ms)

Capability

VGS = 10V

TC = 25oC

VDS, DRAIN TO SOURCE VOLTAGE (V)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

= 7V

V

GS

VGS = 6V

V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 5V

GS

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

18

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

16

14

12

10

DRAIN TO SOURCE ON RESISTANCE(mΩ)

8

0 1020304050

VGS = 6V

VGS = 10V

I

, DRAIN CURRENT (A)

D

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

©2002 Fairchild Semiconductor Corporation FDD10AN06A0 Rev. A

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 50A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature