Fairchild Semiconductor FDC655AN Datasheet
FDC655AN
Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description Features
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
6.3 A, 30 V. R
R
Fast switching.
Low gate charge ( typical 9 nC).
SuperSOTTM-6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick); pin compatible with
TSOP-6.
June 1998
= 0.027 Ω @ VGS = 10 V
DS(ON)
= 0.035 Ω @ VGS = 4.5 V.
DS(ON)
SOT-23
SuperSOTTM-6
S
SuperSOTTM-8 SO-8
SOT-223
1
SOIC-16
6
D
D
2
3
3
SuperSOT -6
TM
Absolute Maximum Ratings T
.55A
G
1
pin
= 25°C unless otherwise note
A
D
D
Symbol Parameter FDC655AN Units
V
V
I
D
Drain-Source Voltage 30 V
DSS
Gate-Source Voltage - Continuous ±20 V
GSS
Drain Current - Continuous (Note 1a) 6.3 A
- Pulsed 20
P
TJ,T
Maximum Power Dissipation (Note 1a) 1.6 W
D
STG
(Note 1b)
0.8
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
θJA
Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W
θJC
5
4
© 1998 Fairchild Semiconductor Corporation
FDC655AN Rev.C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
∆BV
I
DSS
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temp. Coefficient
/∆T
J
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25 oC
VDS = 24 V, V
GS
= 0 V
1 µA
TJ = 55oC
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
ON CHARACTERISTICS (Note 2)
V
∆V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage
Gate Threshold VoltageTemp.Coefficient
/∆T
J
Static Drain-Source On-Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
VGS = 10 V, ID = 6.3 A
1 1.6 3 V
TJ = 125oC 0.035 0.045
VGS = 4.5 V, ID = 5.5 A
I
g
D(on)
FS
On-State Drain Current VGS = 10 V, VDS = 5 V 20 A
Forward Transconductance
VDS = 10 V, ID = 6.3 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
VDS = 15 V, VGS = 0 V,
Output Capacitance f = 1.0 MHz 185 pF
Reverse Transfer Capacitance 80 pF
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 15 V, ID = 1 A, 6 12 ns
Turn - On Rise Time
VGS = 10 V, R
GEN
= 6 Ω
Turn - Off Delay Time 18 29 ns
Turn - Off Fall Time 5 12 ns
Total Gate Charge
VDS = 15 V, ID = 6.3 A,
Gate-Source Charge VGS = 5 V 2.8 nC
Gate-Drain Charge 3.1 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JA
θ
design while R
a. 78oC/W when mounted on a minimum on a 1 in
b. 156oC/W when mounted on a minimum pad of 2oz Cu in FR-4 board.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Continuous Source Diode Current 1.3 A
Drain-Source Diode Forward Voltage
is determined by the user's board design.
CA
θ
2
pad of 2oz Cu in FR-4 board.
VGS = 0 V, IS = 1.3 A (Note 2)
23
mV /oC
10 µA
100 nA
-100 nA
-4.2
mV /oC
0.023 0.027
0.029 0.035
4.5 S
830 pF
10 18 ns
9 13 nC
0.73 1.2 V
is guaranteed by
JC
θ
Ω
FDC655AN Rev.C
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