Fairchild Semiconductor FDC645N Datasheet
FDC645N
N-Channel PowerTrench
MOSFET
FDC645N
July 2000
PRELIMINARY
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Features
• 5.5 A, 30 V. R
R
• High performance trench technology for extremely
low R
DS(ON)
= 30 mΩ @ VGS = 4.5 V
DS(ON)
= 26 mΩ @ VGS = 10 V
DS(ON)
Applications
• DC/DC converter
• Low gate charge (13 nC typical)
• High power and current handling capability
S
D
D
1
2
6
5
G
SuperSOT -6
TM
D
D
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
3
4
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 5.5 A
– Pulsed 20
Maximum Power Dissipation (Note 1a) 1.6 WP
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
±12
0.8
V
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
Thermal Resistance, Junction-to-Case (Note 1) 30
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.645 FDC645N 7’’ 8mm 3000 units
2000 Fairchild Semiconductor Corporati on
°C/W
°C/W
FDC645N Rev B(W)
FDC645N
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
===∆T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA
30 V
22
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
===∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
= 4.5 V, ID = 5.5 A
V
GS
= 10 V, ID = 6.2 A
V
GS
= 4.5 V, ID = 5.5 A, TJ =125°C
V
GS
On–State Drain Current VGS = 4.5 V, VDS = 5 V 20 A
Forward Transconductance VDS = 10 V, ID = 5.5 A 33 S
0.8 1.4 2 V
– 4
25
23
34
30
26
48
mV/°C
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1460 pF
Output Capacitance 227 pF
Reverse Transfer Capacitance
= 15 V, V
V
DS
f = 1.0 MHz
GS
= 0 V,
96 pF
Switching Characteristics (Note 2)
V
= 15 V, ID = 1 A,
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 8 16 ns
Turn–On Rise Time 9 18 ns
Turn–Off Delay Time 35 56 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 13 21 nC
Gate–Source Charge 3.6 nC
Gate–Drain Charge
DS
= 4.5 V, R
V
GS
V
= 15 V, ID = 6.2 A,
DS
= 4.5 V
V
GS
GEN
= 6 Ω
714ns
3.6 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current 1.3 A
Drain–Source Diode Forward
Voltage
= 0 V, IS = 1.3 A (Note 2) 0.7 1.2 V
V
GS
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
θJA
pins. R
is guaranteed by design while R
θJC
a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0%
is determined by the user's board design.
θCA
FDC645N Rev B(W)
)
E
)
)
FDC645N
Typical Characteristics
20
15
10
, DRAIN CURRENT (A
5
D
I
0
VGS = 10V
4.5V
0 0.5 1 1.5 2
V
3.5V
3.0V
2.5V
2.0V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
1.6
ID = 5.5A
= 4.5V
V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANC
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
1.4
VGS = 3.0V
1.2
3.5V
, NORMALIZED
1
DS(ON)
R
DRAIN-SOURCE ON-RESISTANCE
0.8
0 5 10 15 20 25
4.0V
, DRAIN CURRENT (A)
I
D
Drain Current and Gate Voltage.
0.07
0.06
0.05
0.04
0.03
, ON-RESISTANCE (OHM)
DS(ON)
0.02
R
0.01
22.533.544.55
TA = 25oC
V
TA = 125oC
, GATE TO SOURCE VOLTAGE (V)
GS
4.5V
5.0V
6.0V
10V
ID = 3.75 A
Figure 3. On-Resistance Variation
withTemperature.
30
VDS = 5V
25
20
15
10
, DRAIN CURRENT (A
D
I
5
0
11.522.533.5
V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = -55oC
25oC
125oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1. 4
TA = 125oC
25oC
-55oC
V
, BODY DIODE FORWARD VOLT AGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC645N Rev B(W)
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