Fairchild Semiconductor FDC640P Datasheet
FDC640P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC640P
August 2000
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages.
Applications
•
Load switch
• Battery protection
• Power management
S
D
D
G
SuperSOT -6
TM
D
D
Features
• -4.5 A, -20 V. R
R
= 0.050 Ω @ V
DS(ON)
= 0.077 Ω @ V
DS(ON)
= -4.5 V
GS
= -2.5 V
GS
• Rugged gate rating (±12V).
• High performance trench technology for extremely
low R
• SuperSOT
than standard SO-8); low profile (1mm thick).
.
DS(ON)
TM
-6 package: small footprint (72% smaller
1
2
3
3
6
5
4
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed -20
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
12
±
-4.5 A
1.6 W
0.8
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambi ent
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.640 FDC640P 7’’ 8mm 3000 units
2000 Fairchild Semiconductor International
V
C
°
C/W
°
C/W
°
FDC640P, Rev.C
FDC640P
yp
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min T
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V
DSS
Breakdown Voltage Temperature
Coefficient
J
ID = -250 µA, Referenced to 25°C-17mV/
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -12 V, VDS = 0 V -100 nA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = -250 µA-0.6-1-1.5V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
ID = -250 µA, Referenced to 25°C3mV/
VGS = -4.5 V, ID = -4.5 A
V
= -4.5V, ID = -4.5A, TJ=125°C
GS
V
= -2.5 V, ID = -3.6 A
GS
On-State Drain Current VGS = -4.5 V, VDS = -5 V -10 A
Forward Transconductance VDS = -5 V, ID = -4.5 A 13 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1065 pF
Output Capacitance 270 pF
Reverse Transfer Capacitance
V
= -25 V, VGS = 0 V,
DS
f = 1.0 MHz
Max Units
0.037
0.054
0.060
0.05
0.08
0.077
105 pF
C
°
A
µ
C
°
Ω
(Note 2)
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 8.5 17 ns
Turn-On Rise Time 10 18 ns
Turn-Off Delay Time 55 90 ns
Turn-Off Fall Time
Total Gate Charge 10 14 nC
Gate-Source Charge 2.1 nC
Gate-Drain Charge
V
= -10 V, ID = -1 A,
DD
V
= -4.5 V, R
GS
V
= -10 V, ID = -4.5 A,
DS
V
= -4.5 V,
GS
GEN
= 6
Ω
25 40 ns
2.9 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
of the drain pins. R
a) 78°C/W when mounted on a 1.0 in2 pad of 2 oz. copper.
b) 156°C/W when mounted on a minimum pad.
2. Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -1.3 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
(Note 2)
-0.75 -1.2 V
FDC640P, Rev.C
T ypical Characteristics
)
FDC640P
20
15
10
, DRAIN CURRENT (A
D
5
-I
0
VGS = -4.5V
-4.0V
00.511.522.53
-3.5V
-3.0V
-2.5V
-V
, DRAIN TO SOURCE VOLTAGE (V)
DS
-2.0V
Figure 1. On-Region Characteristics.
1.5
ID = -4.5A
1.4
V
= -4.5V
GS
1.3
1.2
1.1
, NORMALIZED
1
DS(ON)
R
0.9
0.8
DRAIN-SOURCE ON-RESISTANCE
0.7
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
2
1.8
VGS = -2.5V
-3.0V
-3.5V
-4.0V
1
0 5 10 15 20
-I
, DRAIN CURRENT (A)
D
-4.5V
, NORMALIZED
R
DS(ON)
1.6
1.4
1.2
DRAIN-SOURCE ON-RESISTANCE
0.8
Figure 2. On-Resistance V ariation
with Drain Current and Gate Volt age.
0.14
0.12
0.1
0.08
0.06
, ON-RESISTANCE (O HM)
0.04
DS(ON)
0.02
R
0
12345
, GATE TO SOURCE VOLTAGE (V)
-V
GS
TA = 125oC
TA = 25oC
ID = -2.3A
Figure 3. On-Resistance V ariation
with Temperature.
20
VDS = -5V
16
12
8
, DRAIN CURRENT (A)
D
-I
4
0
01234
, GATE TO SOURCE VOLTAGE (V)
-V
GS
TA = -55oC
25oC
125oC
Figure 4. On-Resistance V ariation
with Gate-to-Source Volt age.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
00.20.40.60.811.2
TA = 125oC
25oC
-55oC
BODY DIODE FORWARD VOLTAGE (V)
-V
SD,
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward V olt age
Variation with Source Current
and Temperature.
FDC640P, Rev.C