Fairchild Semiconductor FDC638P Datasheet

FDC638P
P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description Features

This P-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.

These devices are well suited for battery power applications: load
switching and power management, battery charging circuits, and
DC/DC conversion.

-4.5 A, -20 V. R
R

Low gate charge (13nC typical).
High performance trench technology for extremely low R
SuperSOTTM-6 package: small footprint (72% smaller than standard

SO-8); low profile (1mm thick).

June 1999

= 0.045 Ω @ VGS = -4.5 V

DS(ON)

= 0.065 Ω @ VGS = -2.5 V.

DS(ON)

DS(ON)

.

SOT-23

SuperSOTTM-8

SO-8

SOT-223SuperSOTTM-6

SOIC-16

S

D

1

6

D

.638

2

G

pin 1

SuperSOT -6

Absolute Maximum Ratings T

TM

= 25°C unless otherwise note

A

Symbol Parameter Ratings Units

V
V
I

D

P

TJ,T

Drain-Source Voltage -20 V

DSS

Gate-Source Voltage - Continuous ±8 V

GSS

Drain Current - Continuous (Note 1a) -4.5 A

- Pulsed -20
Maximum Power Dissipation (Note 1a) 1.6 W

D

STG

(Note 1b)

Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

R
R

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

θJA

Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W

θJC

D

D

3

3

0.8

5

4

©1999 Fairchild Semiconductor

FDC638P Rev.D

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆ BV

I

DSS

I

GSSF

I

GSSR

DSS

DSS

Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient

/∆ T

J

Zero Gate Voltage Drain Current

Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse

VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25 oC

VDS = -16 V, V

GS

= 0 V

TJ = 55 oC
VGS = 8 V, VDS = 0 V
VGS = -8 V, V

DS

= 0 V

-20 V

-18

mV/oC

-1 µA

-10 µA

100 nA

-100 nA

ON CHARACTERISTICS (Note 2)

V

∆ V

R

I

D(on)

g

GS(th)

FS

GS(th)

DS(ON)

Gate Threshold Voltage
Gate Threshold VoltageTemp.Coefficient

/∆ T

J

Static Drain-Source On-Resistance

On-State Drain Current
Forward Transconductance

VDS = VGS, ID = -250 µA
ID = -250 µA, Referenced to 25 oC
VGS = -4.5 V, ID = -4.5 A

TJ = 125 oC
VGS = -2.5 V, ID = -3.8 A
VGS = -4.5 V, VDS = -5 V
VDS = -10 V, ID = -4.5 A

-0.4 -0.9 -1.5 V
3

mV/oC

0.039 0.045

0.054 0.072

0.057 0.065

-20 A

6.5 S

Ω

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance

VDS = -10 V, VGS = 0 V,
Output Capacitance f = 1.0 MHz 270 pF
Reverse Transfer Capacitance 100 pF

1240 pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

t

r

t

D(off)

t

f

Q
Q
Q

Turn - On Delay Time
Turn - On Rise Time

VDD = -5 V, ID = -1 A,

VGS = -4.5 V, R

GEN

= 6 Ω

Turn - Off Delay Time 45 65 ns
Turn - Off Fall Time 30 50 ns

g

gs

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge 3 nC

VDS = -10 V, ID = -4.5 A,

VGS = -5 V

8 16 ns

15 27 ns

13 19 nC

1.8 nC

DRAIN-SOURCE DIODE CHARACTERISTICS

I

S

V

SD

1. R

θJA

guaranteed by design while R

a. 78oC/W when mounted on a 1 in
b. 156oC/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Continuous Source Diode Current -1.3 A
Drain-Source Diode Forward Voltage

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

θCA

2

pad of 2oz Cu on FR-4 board.

VGS = 0 V, IS = -1.3 A (Note 2)

-0.75 -1.2 V

is

θJC

FDC638P Rev.D

Typical Electrical Characteristics

20

V = -4.5V

GS

16

12

8

4

D

- I , DRAIN-SOURCE CURRENT (A)
0

0 1 2 3 4 5

-3.0V

- 2.5V

- 2.0V

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.6

I = -4.5AD

V = -4.5VGS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

1.6

V = -2.5V

GS

1.4

-3.0V

1.2

-3.5V

-4.0V

DS(ON)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.8
0 5 10 15 20

- I , DRAIN CURRENT (A)

D

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage .

0.15

0.12

0.09

0.06

0.03

DS(ON)

R , ON-RESISTANCE (OHM)

0

1 2 3 4 5

- V , GATE TO SOURCE VOLTAGE (V)

GS

-4.5V

I = -2.0AD

A

T = 125°C

25°C

Figure 3. On-Resistance Variation

with Temperature.

20

V = -5V

DS

16

12

8

D

4

- I , DRAIN CURRENT (A)

0

0 0.8 1.6 2.4 3.2 4

-V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5.Transfer Characteristics.

T = -55°CJ

25°C

125°C

Figure 4. On Resistance Variation with

Gate-to-Source Voltage.

20

V = 0VGS

10

T = 125°C

1

J

25°C

0.1

0.01

S

- I , REVERSE DRAIN CURRENT (A)

0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.

FDC638P Rev.B