Fairchild Semiconductor FDC634P Datasheet
FDC634P
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
These P-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as cellular phone and
notebook computer power management and other battery
powered circuits where high-side switching, and low in-line
power loss are needed in a very small outline surface
mount package.
-3.5 A, -20 V. R
R
SuperSOTTM-6 package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
November 1997
= 0.080 Ω @ VGS = -4.5 V
DS(ON)
= 0.110 Ω @ VGS = -2.5 V.
DS(ON)
DS(ON)
.
SOT-23
SuperSOTTM-6
D
S
SuperSOTTM-8
SO-8
SOT-223
1
SOIC-16
6
D
.634
2
5
G
pin
SuperSOT -6
Absolute Maximum Ratings T
TM
= 25°C unless otherwise note
A
Symbol Parameter FDC634P Units
V
V
I
D
Drain-Source Voltage -20 V
DSS
Gate-Source Voltage - Continuous ±8 V
GSS
Drain Current - Continuous (Note 1a) -3.5 A
- Pulsed -11
P
TJ,T
Maximum Power Dissipation (Note 1a) 1.6 W
D
STG
(Note 1b)
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
θJA
Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W
θJC
D
1 3
D
3
4
0.8
© 1997 Fairchild Semiconductor Corporation
FDC634P Rev.C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
∆BV
I
DSS
I
GSSF
I
GSSR
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V
Breakdown Voltage Temp. Coefficient
/∆T
J
Zero Gate Voltage Drain Current
ID = -250 µA, Referenced to 25 o C
VDS = -16 V, V
GS
= 0 V
-29
-1 µA
TJ = 55oC
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS= 0 V
mV /oC
-10 µA
100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V
∆V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage
Gate Threshold VoltageTemp.Coefficient
/∆T
J
Static Drain-Source On-Resistance
VDS = VGS, ID = -250 µA
ID = -250 µA, Referenced to 25 o C
VGS = -4.5 V, ID = -3.5 A
-0.4 -0.6 -1 V
2.1
mV /oC
0.07 0.08
TJ = 125oC 0.099 0.13
VGS = -2.5 V, ID= -3.1 A
I
D(on)
g
FS
On-State Drain Current VGS = -4.5 V, VDS = -5 V -10 A
Forward Transconductance
VDS = -10 V, ID= -3.5 A
0.093 0.11
6.5 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
VDS = -10 V, VGS = 0 V,
Output Capacitance f = 1.0 MHz 270 pF
Reverse Transfer Capacitance 70 pF
665 pF
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = -5 V, ID = -1 A, 8 16 ns
Turn - On Rise Time
VGS = -4.5 V, R
GEN
= 6 Ω
24 38 ns
Turn - Off Delay Time 50 80 ns
Turn - Off Fall Time 29 45 ns
Total Gate Charge
VDS = -5 V, ID = -3.5 A,
9.5 13 nC
Gate-Source Charge VGS = -4.5 V 1.3 nC
Gate-Drain Charge 2.2 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
V
SD
Continuous Source Diode Current -1.3 A
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -1.3 A (Note 2)
-0.75 -1.2 V
TJ = 125oC -0.6 -1
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JA
θ
design while R
a. 78oC/W when mounted on a 1 in
b. 156oC/W when mounted on a minimum pad of 2oz Cu in FR-4 board.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
is determined by the user's board design.
CA
θ
2
pad of 2oz Cu in FR-4 board.
is guaranteed by
JC
θ
Ω
FDC634P Rev.C
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