Fairchild Semiconductor FDC6331L Datasheet

August 2001

3

2

145

6

Vout,C1

R2Vin,R

1

R1,C1

SeeApplicationCircuit

T

FDC6331L

FDC6331L

Integrated Load Switch

General Description

This device is particularly suited for compact power
management in portable electronic equipment where

2.5V to 8V input and 2.8A output current capability are

Features

• –2.8 A, –8 V. R
R
R

= 55 mΩ @ VGS = –4.5 V

DS(ON)

= 70 mΩ @ VGS = –2.5 V

DS(ON)

= 100 m Ω @ VGS = –1.8 V

DS(ON)

needed. This load switch integrates a s mall N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOTTM-6
package.

Applications

• Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)

• High performance trench technology for extremely
low R

DS(ON)

• Load switch

• Power management

D2

S1

D1

ON/OFF

G2

G1

S2

SuperSOT -6

TM

Pin 1

SuperSOT™-6

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

Q2

Vout,C1

Q1

Equivalent Circuit

+ –IN OU

V

DROP

ON/OFF

Symbol Parameter Ratings Units

VIN Maximum Input Voltage ± 8 V
V

High level ON/OFF voltage range –0.5 to 8 V

ON/OFF

I

Load Current – Continuous (Note 1) –2.8 A

Load

– Pulsed –9
PD Maximum Power Dissipation (Note 1) 0.7 W
TJ, T

Operating and Storage Junction Temperature Range –55 to +150 °C

STG

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1) 180
Thermal Resistance, Junction-to-Case (Note 1) 60

°C/W
°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.331 FDC6331L 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation FDC6331L Rev C(W)

FDC6331L

Electrical Characteristics T

= 25°C unless otherw ise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVIN Vin Breakdown Voltage V
I

Zero Gate Voltage Drain Current VIN = 6.4 V, V

Load

IFL Leakage Current, Forward V
IRL Leakage Current, Reverse V

= 0 V, ID = –250 µA 8 V

ON/OFF

= 0 V –1 µA

ON/OFF

= 0 V, VIN = 8 V –100 nA

ON/OFF

= 0 V, VIN = –8 V 100 nA

ON/OFF

On Characteristics (Note 2)

V
R

R

Gate Threshold Voltage VIN = V

ON/OFF (th)

Static Drain–Source

DS(on)

On–Resistance (Q2)

Static Drain–Source

DS(on)

On–Resistance (Q1)

, ID = –250 µA 0.4 0.9 1.5 V

ON/OFF

VIN = 4.5 V, ID = –2.8A
VIN = 2.5 V, ID = –2.5 A
VIN = 1.8 V, ID = –2.0 A

VIN = 4.5 V, ID = 0.4A
VIN = 2.7 V, ID = 0.2 A

34
45
64

3.1

3.8

55
70

100

4
5

m Ω

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –0.6 A
VSD Drain–Source Diode Forward

V

= 0 V, IS = –0.6 A (Note 2) –1.2 V

ON/OFF

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

θJA

surface of the drain pins. R

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

is guaranteed by design while R

θJC

is determined by the user’s board design.

θJA

FDC6331L Load Switch Application Circuit

IN

Q2

OUT

Ω

R1

C1

Q1

LOAD

ON/OFF

R2

External Component Recommendation:

For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030.

FDC6331L Rev C(W)