Fairchild Semiconductor FDC6322C Datasheet

November 1997

FDC6322C
Dual N & P Channel , Digital FET

General Description Features

These dual N & P Channel logic level enhancement mode field
effec transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
The device is an improved design especially for low voltage
applications as a replacement for bipolar digital transistors in
load switching applications. Since bias resistors are not
required, this dual digital FET can replace several digital
transistors with difference bias resistors.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

N-Ch 25 V, 0.22 A, R
P-Ch 25 V, -0.46 A, R

= 5 Ω @ VGS= 2.7 V.

DS(ON)

= 1.5 Ω @ VGS= -2.7 V.

DS(ON)

Very low level gate drive requirements allowing direct
operation in 3 V circuits. V

GS(th)

< 1.5 V.

Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model

Replace NPN & PNP digital transistors.

SO-8

SOT-223

SOIC-16

Mark: .322

4

5

6

Absolute Maximum Ratings T

Symbol Parameter N-Channel P-Channel Units

V

, VCCDrain-Source Voltage, Power Supply Voltage 25 -25 V

DSS

V

GSS

ID, I

P

D

TJ,T
ESD Electrostatic Discharge Rating MIL-STD-883D

THERMAL CHARACTERISTICS

R

θJA

R

θJC

Gate-Source Voltage, 8 -8 V

, V

IN

Drain/Output Current - Continuous 0.22 -0.46 A

O

Maximum Power Dissipation (Note 1a) 0.9 W
(Note 1b) 0.7
Operating and Storage Tempature Ranger -55 to 150 °C

STG

Human Body Model (100pf / 1500 Ohm)

Thermal Resistance, Junction-to-Ambient (Note 1a) 140 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W

= 25oC unless other wise noted

A

- Pulsed 0.5 -1

6 kV

3

2

1

© 1997 Fairchild Semiconductor Corporation

FDC6322C.Rev B1

DMOS Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions
OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 25 V

VGS = 0 V, ID = -250 µA

∆BV

DSS

Breakdown Voltage Temp. Coefficient ID= 250 µA, Referenced to 25 oC N-Ch 25 mV /oC

/∆T

J

ID = -250 µA, Referenced to 25 oC

I

DSS

I

DSS

I

GSS

Zero Gate Voltage Drain Current VDS= 20 V, VGS= 0 V, N-Ch 1 µ A

Zero Gate Voltage Drain Current

Gate - Body Leakage Current

VDS =-20 V, V

VGS = 8 V, VDS= 0 V
VGS = -8 V, VDS= 0 V P-Ch -100 nA

ON CHARACTERISTICS (Note 2)

∆V

GS(th)

Gate Threshold Voltage Temp. Coefficient

/∆T

J

ID = 250 µA, Referenced to 25 o C
ID= -250 µA, Referenced to 25 o C P-Ch 2.1

V

GS(th)

Gate Threshold Voltage

VDS = VGS, ID= 250 µA
VDS = VGS, ID= -250 µA P-Ch -0.65 -0.86 -1.5

R

DS(ON)

Static Drain-Source On-Resistance

VGS = 2.7 V, ID = 0.2 A

VGS = 4.5 V, ID = 0.4 A
VGS = -2.7 V, ID = -0.25 A

VGS = -4.5 V, ID = -0.5 A

I

D(ON)

On-State Drain Current

VGS = 2.7 V, VDS = 5 V
VGS = -2.7 V, VDS = -5 V

g

FS

Forward Transconductance

VDS = 5 V, ID= 0.4 A
VDS = -5 V, ID= -0.5 A

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance N-Channel N-Ch 9.5 pF

VDS= 10 V, VGS= 0 V,

C

oss

Output Capacitance f = 1.0 MHz N-Ch 6

P-Channel P-Ch 35

C

rss

Reverse Transfer Capacitance

VDS= -10 V, VGS = 0V,
f = 1.0 MHz P-Ch 9.5

GS

= 0 V,

Min Typ Max Units

Type

P-Ch -25

P-Ch -22

TJ = 55°C 10

P-Ch -1 µA

TJ = 55°C -10

N-Ch 100 nA

N-Ch -2.1

N-Ch 0.65 0.85 1.5 V

N-Ch 3.8 5

TJ =125°C

6.3 9

3.1 4

P-Ch 1.22 1.5

TJ =125°C

1.65 2.4

0.87 1.1
N-Ch 0.2 A
P-Ch -0.5
N-Ch 0.2 S
P-Ch 0.8

P-Ch 62

N-Ch 1.3

mV / oC

Ω

FDC6322C.Rev B1

SWITCHING CHARACTERISTICS (Note 2)
Symbol Parameter Conditions

t

D(on)

Turn - On Delay Time N-Channel N-Ch 5 10 nS

Type

Min Typ Max Units

VDD = 6 V, ID = 0.5 A, P-Ch 7 14

t

r

Turn - On Rise Time

VGs = 4.5 V, R

= 50 Ω

GEN

N-Ch 4.5 10 nS
P-Ch 8 16

t

D(off)

Turn - Off Delay Time P-Channel N-Ch 4 8 nS

VDD = -6 V, ID = -0.5 A, P-Ch 55 90

t

f

Turn - Off Fall Time

V

= -4.5 V, R

Gen

GEN

= 50 Ω

N-Ch 3.2 7 nS
P-Ch 35 55

Q

g

Q

gs

Total Gate Charge N-Channel N-Ch 0.49 0.7 nC

VDS= 5 V, ID = 0.2 A,

P-Ch 1 1.5

Gate-Source Charge VGS = 4.5 V N-Ch 0.22 nC

P- Channel P-Ch 0.32

Q

gd

Gate-Drain Charge

VDS = -5 V, ID = -0.25 A,
VGS = -4.5 V

N-Ch 0.07 nC
P-Ch 0.25

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current N-Ch 0.5 A

P-Ch -0.5

V

SD

Notes:

1. R
design while R

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A

VGS = 0 V, IS = -0.5 A

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

is determined by the user's board design. R

CA

θ

shown below for single device operation on FR-4 in still air.

JA

θ

(Note 2) N-Ch 0.97 1.3 V

(Note 2)

P-Ch -0.88 -1.2

is guaranteed by

JC

θ

a. 140OC/W on a 0.125 in2 pad of

2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

b. 180OC/W on a 0.005 in2 of pad

of 2oz copper.

FDC6322C.Rev B1